Initial stage of MBE growth of MoSe monolayer.

Nanotechnology

State Key Laboratory of Precision Measuring Technology and Instruments, Nanchang Institute for Microtechnology of Tianjin University, Tianjin University, Weijin Road 92, Nankai District, 300072 Tianjin, People's Republic of China.

Published: July 2020

An atomically thin MoSe layer has been synthesized on mica using molecular beam epitaxy (MBE). The polymorphous of the MoSe layer depends on the coverage and the growth temperature. At low coverages and low growth temperature, 1T-MoSe forms in addition to a comparable quantity of 2H-MoSe. The metastable 1T-MoSe transfers gradually to the stable 2H-MoSe before the completion of the first monolayer. The current result sheds some light on the complexity of the nucleation and growth of transition metal dichalcogenide (TMDC) monolayers and implies a possible route for a phase selective synthesis using MBE.

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http://dx.doi.org/10.1088/1361-6528/ab884bDOI Listing

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