Generative Adversarial Network (GAN) requires extensive computing resources making its implementation in edge devices with conventional microprocessor hardware a slow and difficult, if not impossible task. In this paper, we propose to accelerate these intensive neural computations using memristive neural networks in analog domain. The implementation of Analog Memristive Deep Convolutional GAN (AM-DCGAN) using Generator as deconvolutional and Discriminator as convolutional memristive neural network is presented. The system is simulated at circuit level with 1.7 million memristor devices taking into account memristor non-idealities, device and circuit parameters. The design is modular with crossbar arrays having a minimum average power consumption per neural computation of 47nW. The design exclusively uses the principles of neural network dropouts resulting in regularization and lowering the power consumption. The SPICE level simulation of GAN is performed with 0.18 μm CMOS technology and WO memristive devices with R = 40 kΩ and R = 250 kΩ, threshold voltage 0.8 V and write voltage at 1.0 V.
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http://dx.doi.org/10.1038/s41598-020-62676-7 | DOI Listing |
Chem Rev
December 2024
Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States.
Conventional artificial intelligence (AI) systems are facing bottlenecks due to the fundamental mismatches between AI models, which rely on parallel, in-memory, and dynamic computation, and traditional transistors, which have been designed and optimized for sequential logic operations. This calls for the development of novel computing units beyond transistors. Inspired by the high efficiency and adaptability of biological neural networks, computing systems mimicking the capabilities of biological structures are gaining more attention.
View Article and Find Full Text PDFSmall Methods
December 2024
State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
Memristors and magnetic tunnel junctions are showing great potential in data storage and computing applications. A magnetoelectrically coupled memristor utilizing electron spin and electric field-induced ion migration can facilitate their operation, uncover new phenomena, and expand applications. In this study, devices consisting of Pt/(LaCoO/SrTiO)/LaCoO/Nb:SrTiO (Pt/(LCO/STO)/LCO/NSTO) are engineered using pulsed laser deposition to form the LCO/STO superlattice layer, with Pt and NSTO serving as the top and bottom electrodes, respectively.
View Article and Find Full Text PDFCogn Neurodyn
December 2024
Center for Research, SRM Institute of Science and Technology-Ramapuram, Chennai, India.
In this study, we investigate the impact of first and second-order coupling strengths on the stability of a synchronization manifold in a Discrete FitzHugh-Nagumo (DFHN) neuron model with memristor coupling. Master Stability Function (MSF) is used to estimate the stability of the synchronized manifold. The MSF of the DFHN model exhibits two zero crossings as we vary the coupling strengths, which is categorized as class .
View Article and Find Full Text PDFCogn Neurodyn
December 2024
School of Information Science and Engineering, Dalian polytechnic University, Dalian, 116034 China.
Two types of neuron models are constructed in this paper, namely the single discrete memristive synaptic neuron model and the dual discrete memristive synaptic neuron model. Firstly, it is proved that both models have only one unstable equilibrium point. Then, the influence of the coupling strength parameters and neural membrane amplification coefficient of the corresponding system of the two models on the rich dynamical behavior of the systems is analyzed.
View Article and Find Full Text PDFNeural Netw
December 2024
School of Mathematics, China University of Mining and Technology, Xuzhou, 221116, China; Jiangsu Center for Applied Mathematics (CUMT), Xuzhou 221116, China. Electronic address:
This study examines the concepts of passivity and robust passivity in inertial memristive neural networks (IMNNs) that feature time-varying delays. By using non-smooth analysis and the passivity theorem, algebraic criteria for both passivity and robust passivity are derived by using the non-reduced order method. The proposed criteria, based on the non-reduced order method, effectively reduce the complexity of derivation and computation, thereby simplifying the verification process.
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