AI Article Synopsis
- - The inefficiency and rapid deterioration of ink-jet printed quantum dot light emitting diodes (QLEDs) limit their use in next-gen displays, mainly due to unresolved issues with trap states on the quantum dot surface.
- - A new approach involving dual ionic passivation significantly improved the performance of ink-jet printed QLEDs, achieving an external quantum efficiency of over 16% and a lifespan exceeding 1.7 million hours.
- - The innovative liquid phase exchange of ligands meets the needs of ink-jet printing, paving the way for mass production and broader industrial applications of QLED technology.
Article Abstract
The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7118149 | PMC |
| http://dx.doi.org/10.1038/s41467-020-15481-9 | DOI Listing |
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