Using first-principles calculation and Boltzmann electron/phonon transport theory, we present an accurate theoretical prediction of thermoelectric properties of the α-AgS crystal, a ductile inorganic semiconductor reported experimentally [. 421]. The semiconductor α-AgS has ultralow thermal conductivity associated with high anisotropy, which can be attributed to the complex crystalline structure and weak bonding. The optimal values of the Seebeck coefficient are 0.27 × 10 V/K for n-type and 0.21 × 10 V/K for p-type α-AgS, respectively, which are comparable to those of many promising thermoelectric materials. As a consequence, a maximum value of 0.97/1.12 can be realized for p-type/n-type α-AgS at room temperature. More interestingly, the value of can be further enhanced to 1.65 at room temperature by applying 5% compressive strain. Moreover, we find that the electronic thermal conductivity is a major factor limiting the , which is several times the lattice thermal conductivity for n-type α-AgS. Our work demonstrates the great advantage of the α-AgS crystal as a ductile thermoelectric material and sparks new routes to improve its figure of merit.
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http://dx.doi.org/10.1021/acsomega.9b03929 | DOI Listing |
Nano Lett
January 2025
Center for High Pressure Science and Technology Advanced Research, Beijing 100193, P. R. China.
Saturated sp-carbon nanothreads (CNTh) have garnered significant interest due to their predicted high Young's modulus and thermal conductivity. While the incorporation of heteroatoms into the central ring has been shown to influence the formation of CNTh and yield chemically homogeneous products, the impact of pendant groups on the polymerization process remains underexplored. In this study, we investigate the pressure-induced polymerization of phenol, revealing two phase transitions occurring below 0.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, P.R. China.
Heat dissipation has become a critical challenge in modern electronics, driving the need for a revolution in thermal management strategies beyond traditional packaging materials, thermal interface materials, and heat sinks. Cubic boron arsenide (c-BAs) offers a promising solution, thanks to its combination of high thermal conductivity and high ambipolar mobility, making it highly suitable for applications in both electronic devices and thermal management. However, challenges remain, particularly in the large-scale synthesis of a high-quality material and the tuning of its physical properties.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, China.
Cu/Diamond (Cu/Dia) composites are regarded as next-generation thermal dissipation materials and hold tremendous potential for use in future high-power electronic devices. The interface structure between the Cu matrix and the diamond has a significant impact on the thermophysical properties of the composite materials. In this study, Cu/Dia composite materials were fabricated using the Spark Plasma Sintering (SPS) process.
View Article and Find Full Text PDFMater Horiz
January 2025
Department of Physics, Pukyong National University, Busan 48513, Korea.
Altermagnetism is a new class of material with zero net magnetization, but having a nonrelativistic spin-split band structure. Here, we investigate the multifunctional properties of the hexagonal wurtzite MnO (-MnO). -MnO has a direct band gap of 0.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Chennai 600113, India.
The MgSb-based layered compounds exhibit exceptional thermoelectric properties over a wide temperature range and possess the potential to supplant traditional BiTe modules with reliable and economical MgSb-based thermoelectric devices, contingent upon the availability of a complementary p-type MgSb material with high thermoelectric efficiency comparable to that of n-type MgSb. We provide a simpler method involving the codoping of monovalent atoms (K and Na) at the Mg site of the MgSb lattice to improve the thermoelectric performance of p-type MgSb. K-Na codoping results in a peak power factor of around 0.
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