Typically, materials with large optical losses such as metals are used as microheaters for silicon based thermo-optic phase shifters. Consequently, the heater must be placed far from the waveguide, which could come at the expense of the phase shifter performance. Reducing the gap between the waveguide and the heater allows reducing the power consumption or increasing the switching speed. In this work, we propose an ultra-low loss microheater for thermo-optic tuning by using a CMOS-compatible transparent conducting oxide such as indium tin oxide (ITO) with the aim of drastically reducing the gap. Using finite element method simulations, ITO and Ti based heaters are compared for different cladding configurations and TE and TM polarizations. Furthermore, the proposed ITO based microheaters have also been fabricated using the optimum gap and cladding configuration. Experimental results show power consumption to achieve a π phase shift of 10 mW and switching time of a few microseconds for a 50 µm long ITO heater. The obtained results demonstrate the potential of using ITO as an ultra-low loss microheater for high performance silicon thermo-optic tuning and open an alternative way for enabling the large-scale integration of phase shifters required in emerging integrated photonic applications.
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http://dx.doi.org/10.1364/OE.386959 | DOI Listing |
Materials (Basel)
December 2024
Shanghai Frontiers Science Research Center of Advanced Textiles, Engineering Research Center of Technical Textiles (Ministry of Education), Key Laboratory of Textile Science & Technology (Ministry of Education), College of Textiles, Donghua University, Shanghai 201620, China.
Microwave absorbers with infrared camouflage are highly desirable in military fields. Self-supporting 3D architectures with tailorable shapes, composed of FeCoNi alloy/carbon nanotubes (CNTs) @ carbon nanofibers (CNFs), were fabricated in this study. On the one hand, multiple loss mechanisms were introduced into the high-elastic sponges.
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January 2025
State Key Laboratory of Materials Processing and Die & Mould Technology, and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, P. R. China.
Intensifying the severity of electromagnetic (EM) pollution in the environment represents a significant threat to human health and results in considerable energy wastage. Here, we provide a strategy for electricity generation from heat generated by electromagnetic wave radiation captured from the surrounding environment that can reduce the level of electromagnetic pollution while alleviating the energy crisis. We prepared a porous, elastomeric, and lightweight BiTe/carbon aerogel (CN@BiTe) by a simple strategy of induced in situ growth of BiTe nanosheets with three-dimensional (3D) carbon structure, realizing the coupling of electromagnetic wave absorption (EMA) and thermoelectric (TE) properties.
View Article and Find Full Text PDFSci Rep
January 2025
College of Physics and Electronic Information, Baicheng Normal University, Jilin, 137000, China.
An innovative GaN trench MOSFET featuring an ultra-low gate-drain charge (Q) is proposed, with its operational mechanisms thoroughly investigated using TCAD simulations. This novel MOSFET design introduces a triple-shield structure (BPSG-MOS) comprising three critical components: (1) a grounded split gate (SG), (2) a P+ shield region (PSR), and (3) a semi-wrapped BP layer that extends the P-shield beneath the gate and along the sidewalls of the trench gate. Both the SG and PSR effectively reduce gate-drain coupling, transforming most of the gate-drain capacitance (C) into a series combination of gate-source capacitance (C) and drain-source capacitance (C).
View Article and Find Full Text PDFNat Commun
January 2025
Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Department of Chemistry, Tsinghua University, Beijing, China.
The further success of OLED beyond conventional low-luminance display applications has been hampered by the low power efficiency (PE) at high luminance. Here, we demonstrate the strategic implementation of an exceptionally high-PE, high-luminance OLED using a phosphor-assisted thermally-activated-delayed-fluorescence (TADF)-sensitized narrowband emission. On the basis of a TADF sensitizing-host possessing a fast reverse intersystem crossing, an anti-aggregation-caused-quenching character and a good bipolar charge-transporting ability, this design achieves not only a 100% exciton radiative consumption with decay times mainly in the sub-microsecond regime to mitigate exciton annihilations for nearly roll-off-free external quantum efficiency, but also narrowband emission with both small energetic loss during energy transfer and resistive loss with increasing luminance.
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January 2025
State Key Laboratory for Extreme Photonics and Instrumentation, Center for Optical & Electromagnetic Research, College of Optical Science and Engineering, International Research Center for Advanced Photonics (Haining), Zhejiang University, Hangzhou, China.
Silicon photonic signal processors promise a new generation of signal processing hardware with significant advancements in processing bandwidth, low power consumption, and minimal latency. Programmable silicon photonic signal processors, facilitated by tuning elements, can reduce hardware development cycles and costs. However, traditional programmable photonic signal processors based on optical switches face scalability and performance challenges due to control complexity and transmission losses.
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