AI Article Synopsis
- The study focused on the optoelectronic characteristics and stress properties of Mo-doped ZnO films deposited on flexible substrates using a specific sputtering technique.
- Increased substrate temperatures led to a decrease in transmittance and a reduced (002) peak in XRD spectra, while also enhancing carrier mobility and concentration; however, these effects were not seen with increased oxygen flow.
- The energy gap of the MZO films shifted towards higher energies (blueshift) with rising substrate temperatures, but instead shifted towards lower energies (redshift) when the oxygen flow increased.
Article Abstract
This research investigated the optoelectronic properties and anisotropic stress of Mo-doped ZnO (MZO) films, which were deposited on polyethylene terephthalate and polycarbonate flexible substrates with radio frequency magnetron sputtering. The optical properties, x-ray diffraction (XRD) spectra, Hall effect measurements, and self-made phase-shift shadow moiré interferometer readings were utilized to evaluate the performances of the MZO films. Based on the results, the transmittance and (002) peak size of the XRD spectra decreased when the substrate temperature increased. However, this took place especially when the oxygen flow was on the increase. Also, carrier mobility, carrier concentration, and anisotropic stresses increased at higher substrate temperatures, but this was not the case when the oxygen flow increased. The energy gap () of the MZO films showed a blueshift with an increase in the substrate temperatures, but this rather changed to a redshift when the oxygen flow was observed to be on the rise.
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