Spin current generation through the spin-orbit interaction in non-magnetic materials lies at the heart of spintronics. When the generated spin current is injected to a ferromagnet, it produces spin-orbit torque and manipulates magnetization efficiently. Optically generated spin currents are expected to be superior to their electrical counterparts in terms of the manipulation speed. Here we report optical spin-orbit torques in heavy metal/ferromagnet heterostructures. The strong spin-orbit coupling of heavy metals induces photo-excited carriers to be spin-polarized, and their transport from heavy metals to ferromagnets induces a torque on magnetization. Our results demonstrate that heavy metals can generate spin-orbit torque not only electrically but also optically.
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http://dx.doi.org/10.1038/s41467-020-15247-3 | DOI Listing |
Nat Commun
January 2025
Institute of Physics, Johannes Gutenberg University Mainz, 55099, Mainz, Germany.
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switching, long data retention, and high-density integration in SOT MRAM require ferromagnets (FM) with perpendicular magnetic anisotropy (PMA) combined with large torques enhanced by Orbital Hall Effect (OHE). We have engineered a PMA [Co/Ni] FM on selected OHE layers (Ru, Nb, Cr) and investigated the potential of theoretically predicted larger orbital Hall conductivity (OHC) to quantify the torque and switching current in OHE/[Co/Ni] stacks.
View Article and Find Full Text PDFACS Nano
December 2024
Department of Materials Science and Engineering, National University of Singapore, Singapore117575, Singapore.
Nanoscale Horiz
December 2024
Electrical and Computer Engineering, The Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, USA.
Antiferromagnetic materials have several unique properties, such as a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against perturbation from external magnetic fields and rapid magnetization dynamics, as dictated by the geometric mean of their exchange and anisotropy energies. However, experimental and theoretical techniques to detect and manipulate the antiferromagnetic order in a fully electrical manner must be developed to enable advanced spintronic devices with antiferromagnets as their active spin-dependent elements. Among the various antiferromagnetic materials, conducting antiferromagnets offer high electrical and thermal conductivities and strong electron-spin-phonon interactions.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China.
The prevailing research emphasis has been on reducing the critical switching current density (J) by enhancing the damping-like efficiency (β). However, recent studies have shown that the field-like efficiency (β) can also play a major role in reducing J. In this study, the central inversion asymmetry of Pt-Co is significantly enhanced through interface engineering at the sub-atomic layer of Ta, thereby inducing substantial alterations in the β associated with the interface.
View Article and Find Full Text PDFAdv Mater
December 2024
Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
Manipulating the polarization of spin current is essential for understanding the mechanism of charge-to-spin conversion and achieving efficient electrically driven magnetization switching. Here, a novel exchange-spring magnetic structure is introduced formed by the coupling of perpendicular magnetic anisotropy (PMA) CoTb and in-plane magnetic anisotropy (IMA) Co films. When a spin current with the polarization along the y-direction flows through this exchange-spring (x-z plane) structure, the interaction between the y-spin and the local exchange field with a non-collinear spatial distribution gives rise to substantial unconventional spin polarizations in the x- and z-directions, enabling field-free spin-orbit torque driven perpendicular magnetization switching at room temperature.
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