Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity -factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum well nanowire laser structures, revealing high -factors of 1250 ± 90 corresponding to end-facet reflectivities of = 0.73 ± 0.02. By using optimised direct-indirect band alignment in the active region, we demonstrate a well-refilling mechanism providing a quasi-four-level system leading to multi-nanosecond lasing and record low room temperature lasing thresholds (~6 μJ cm pulse) for III-V nanowire lasers. Our findings demonstrate a highly promising new route towards continuously operating silicon-integrated nanolaser elements.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7078256 | PMC |
| http://dx.doi.org/10.1038/s41377-020-0279-y | DOI Listing |
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