Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory.

Chem Sci

Department of Chemistry , School of Science , Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku , Tokyo 152-8550 , Japan . Email:

Published: December 2019

AI Article Synopsis

  • A redox-active molecule called 2,5,8-tri(4-pyridyl)1,3-diazaphenalene demonstrated unique non-volatile resistive switching memory due to its specific molecular orientation.
  • The study revealed that the directional π-π interactions are crucial for creating conductive layers necessary for switching, differing from previous methods.
  • These findings enhance our understanding of electron transport in organic materials, paving the way for a new type of resistive random access memory (ReRAM) using organic compounds.

Article Abstract

Control of the π-π interaction direction in a redox-active π-molecule based film led to the formation of new mechanistic nonvolatile resistive switching memory: a redox-active organic molecule, 2,5,8-tri(4-pyridyl)1,3-diazaphenalene, showed non-volatile bistable resistance states with a high on-off ratio, retention, and endurance only when the molecular orientation was anisotropic. Control experiments using redox-active/redox-inert organic molecules with isotropic/anisotropic molecular orientations implied that the formation of conductive oxidized π-π stacking layers from non-conductive neutral π-π stacking layers is responsible for resistive switching phenomena, indicating new mechanisms such as ReRAM. Our findings will give a comprehensive understanding of electron transport in organic solid materials based on the effects of redox-activity and molecular arrangement, leading to fabrication of a new class of ReRAM based on organic molecules.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7066666PMC
http://dx.doi.org/10.1039/c9sc04213jDOI Listing

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