α-SiAlON ceramics have been in use as engineering ceramics in the most arduous industrial environments such as molten metal handling, cutting tools, gas turbine engines, extrusion molds, thermocouple sheaths, protective cover for high-temperature sensors, etc., owing to their outstanding mechanical, thermal and chemical stability. Taking advantage of the intrinsic properties of α-SiAlONs, we investigate, in this paper, the possibility of using the Er-doped α-SiAlON (Er-α-SiAlON) ceramic as a high-temperature sensing material via its unique near-infrared to visible upconversion property. We first use neutron diffraction and density functional theory calculations to study the electronic structure and thermodynamic stability of Er-α-SiAlON. It is found that the interstitial doping of Er stabilizes the α-SiAlON structure via chemical bonds with O-atoms with N:O ratio of 5:2 in the seven-fold coordination sites of the Er ion. Temperature-dependent upconversion emissions are then studied under 980 and 793 nm excitations over a temperature range of 298-1373 K and the fluorescence intensity ratio (FIR) technique has been employed to investigate the temperature sensing behavior. Temperature-dependent Raman behavior is also investigated. We demonstrate that using Er-α-SiAlON as a sensing material, the limit of temperature measurement via the FIR technique can be pushed well beyond 1200 K.
Download full-text PDF |
Source |
---|---|
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7080770 | PMC |
http://dx.doi.org/10.1038/s41598-020-61105-z | DOI Listing |
ACS Nano
December 2024
Department of Materials Science and Engineering, Hanbat National University, Daejeon 34158, Republic of Korea.
Ultrasmall-scale semiconductor devices (≤5 nm) are advancing technologies, such as artificial intelligence and the Internet of Things. However, the further scaling of these devices poses critical challenges, such as interface properties and oxide quality, particularly at the high-/semiconductor interface in metal-oxide-semiconductor (MOS) devices. Existing interlayer (IL) methods, typically exceeding 1 nm thickness, are unsuitable for ultrasmall-scale devices.
View Article and Find Full Text PDFSmall Methods
December 2024
Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
This study introduces a novel method for achieving highly ordered-crystalline InGaO [0 ≤ x ≤ 0.6] thin films on Si substrates at 250 °C using plasma-enhanced atomic-layer-deposition (PEALD) with dual seed crystal layers (SCLs) of γ-AlO and ZnO. Field-effect transistors (FETs) with random polycrystalline InGaO channels (grown without SCLs) show a mobility (µFE) of 85.
View Article and Find Full Text PDFAdv Mater
December 2024
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Halide perovskites have emerged as promising materials for a wide variety of optoelectronic applications, including solar cells, light-emitting devices, photodetectors, and quantum information applications. In addition to their desirable optical and electronic properties, halide perovskites provide tremendous synthetic flexibility through variation of not only their chemical composition but also their structure and morphology. At the heart of their use in optoelectronic technologies is the interaction of light with electronic excitations in the form of excitons.
View Article and Find Full Text PDFSmall Methods
December 2024
Faculty of Materials Science and Engineering, Kunming University of Science and Technology, No. 68 Wenchang Road, Kunming, 650093, China.
Controllably modulating the structure of transition-metal chalcogenides (TMCs) from 2D to 1D and tuning their electronic properties has drawn particular attention currently due to their remarkable properties and potential applications. In this work, by precisely controlling the chemical concentration of Te atoms, the transformation from the 2D honeycomb AgTe monolayer to high-quality and well-defined 1D AgTe nanowires on the Ag(111) substrate has been successfully achieved. The combination of scanning tunneling microscopy measurements and first-principles calculations has confirmed that the mechanism underlying the entire dimensional transformation lies in the directional movement of Ag atoms in the 2D AgTe monolayer regulated by the concentration of Te atoms.
View Article and Find Full Text PDFJ Phys Chem A
December 2024
Department of Chemistry, Johns Hopkins University, 3400 N. Charles Street, Baltimore, Maryland 21218, United States.
Diaryl thieno-[3,4-]thiophenes (TT) are photoswitchable compounds that operate through reversible photoinduced cyclization/cycloreversion and have been designed specifically for integration within π-conjugated polymers to switchably manipulate polymer electronic properties. Here we report on how cross conjugating the central TT moiety impacts photocyclization dynamics as interrogated using transient absorption spectroscopy (TAS) for a series of switches built with electron-rich substituents that have various electronic interaction strengths with the TT core. For cross-conjugated structures exhibiting a propensity to switch in steady-state photoconversion experiments, ultrafast TAS reveals signatures of rapid dynamics (occurring within <1-10 ps) similar to those observed for unsubstituted switches and that are consistent with photocyclization.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!