Cobalt pnictides show good catalytic activity and stability on oxygen evolution reaction (OER) behaviors in a strong alkaline solution. Identifying the intrinsic composition/structure-property relationship of the oxide layer on the cobalt pnictides is critical to design better and cheaper electrocatalysts for the commercial viability of OER technologies. In this work, the restructured oxide layer on the cobalt pnictides and its effect on the activity and mechanism for OER is systematically analyzed. In-situ electrochemical impedance spectroscopy (EIS) and near edge x-ray absorption fine structure (NEXAFS) spectra indicate that a higher OER performance of cobalt pnictides than Co O is attributed to the more structural disorder and oxygen defect sites in the cobalt oxide layer evolved from cobalt pnictides. Using angle resolved x-ray photoelectron spectroscopy (AR-XPS) further demonstrates that the oxygen defect sites mainly concentrate on the subsurface of cobalt oxide layer. The current study demonstrated promising opportunities for further enhancing the OER performance of cobalt-based electrocatalysts by controlling the subsurface defects of the restructured active layer.
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Sci Rep
January 2025
Department of Chemistry, School of Advanced Sciences, Vellore Institute of Technology, Vellore, 632014, Tamil Nadu, India.
This study investigates the potential of zinc oxide (ZnO) and Ag-doped zinc oxide (Ag-ZnO) nanoparticles (NPs) (1, 3 and 5 wt%) electrospun into poly(vinylidene fluoride) (PVDF) based triboelectric nanogenerators (TENGs) to harness electrical energy from ambient mechanical vibrations. ZnO and Ag-ZnO NPs were developed using a co-precipitation method. 3 wt% Ag-ZnO doping was optimized to exhibit a higher β-crystalline phase in PVDF (PAZ3).
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January 2025
Department of Computer Engineering, Faculty of Engineering, Bu-Ali Sina University, Hamedan, Iran.
According to recent research, with the ever-increasing use of Internet of Things (IoT) devices, there has arisen an ever-growing need for high-performance yet low-power circuits that can efficiently process information. Quantum-dot Cellular Automata (QCA) has emerged as a promising alternative to conventional complementary metal-oxide-semiconductor (CMOS) technology due to its great potential in digital design at nanoscale levels on account of very low power consumption and very high processing speed. However, QCA circuits are inherently prone to faults due to variations in manufacturing processes and due to the influence of environmental factors.
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January 2025
School of Earth Sciences, China University of Geosciences, Wuhan, 430074, Hubei, China.
Soil magnetic records in Quaternary red earth (QRE) deposits contain a valuable record of paleoclimate information, providing insights into controls on Earth's climate system in the past and potentially helping to predict its response to perturbations in the future. Here, analysis of the environmental magnetism and mineralogy of the Xuancheng QRE (Anhui Province, South China) shows that magnetic variation was strongly linked to production of authigenic ferrimagnetic minerals such as maghemite. Fine-grained maghemite formed during the weathering-related transformation of iron-bearing illite to vermiculite, generating aggregates of vermiculite or mixed-layer illite-vermiculite.
View Article and Find Full Text PDFJ Hazard Mater
January 2025
School of Environmental Science and Engineering, Tianjin University, Tianjin 300072, China. Electronic address:
Formaldehyde (FA) is a hazardous pollutant causing acute and chronic poisoning in humans. While plants provide a natural method of removing FA pollution, their ability to absorb and degrade FA is limited. To improve the ability of plants to degrade FA, we introduced the E.
View Article and Find Full Text PDFNanoscale
January 2025
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583.
The widespread proliferation and increasing use of portable electronic devices and wearables, and the recent developments in artificial intelligence and internet-of-things, have fuelled the need for high-density and low-voltage non-volatile memory devices. Nanocrystal memory, an emergent non-volatile memory (NVM) device that makes use of the Coulomb blockade effect, can potentially result in the scaling of the tunnel dielectric layer to a very small thickness. Since the nanocrystals are electrically isolated, potential charge leakage paths localized defects in the thin tunnel dielectric can be substantially reduced, unlike that in a continuous polysilicon floating gate structure.
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