A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device's cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 10 s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153612 | PMC |
| http://dx.doi.org/10.3390/nano10030457 | DOI Listing |
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