Background: There is scientific evidence that older adults aged 65 and over walk with increased step width variability which has been associated with risk of falling. However, there are presently no threshold levels that define the optimal reference range of step width variability. Thus, the purpose of our study was to estimate the optimal reference range for identifying older adults with normative and excessive step width variability.
Methods: We searched systematically the BMC, Cochrane Library, EBSCO, Frontiers, IEEE, PubMed, Scopus, SpringerLink, Web of Science, Wiley, and PROQUEST databases until September 2018, and included the studies that measured step width variability in both younger and older adults during walking at self-selected speed. Data were pooled in meta-analysis, and standardized mean differences (SMD) with 95% confidence intervals (CI) were calculated. A single-decision threshold method based on the Youden index, and a two-decision threshold method based on the uncertain interval method were used to identify the optimal threshold levels (PROSPERO registration: CRD42018107079).
Results: Ten studies were retrieved (older adults = 304; younger adults = 219). Step width variability was higher in older than in younger adults (SMD = 1.15, 95% CI = 0.60; 1.70; t = 4.72, p = 0.001). The single-decision method set the threshold level for excessive step width variability at 2.14 cm. For the two-decision method, step width variability values above the upper threshold level of 2.50 cm were considered excessive, while step width variability values below the lower threshold level of 1.97 cm were considered within the optimal reference range.
Conclusion: Step width variability is higher in older adults than in younger adults, with step width variability values above the upper threshold level of 2.50 cm to be considered as excessive. This information could potentially impact rehabilitation technology design for devices targeting lateral stability during walking.
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http://dx.doi.org/10.1186/s12984-020-00671-9 | DOI Listing |
Mov Disord
January 2025
Department of Neurology, Tel Aviv Sourasky Medical Center, Tel Aviv, Israel.
Background: Wider step width and lower step-to-step variability are linked to improved gait stability and reduced fall risk. It is unclear if patients with spinocerebellar ataxia (SCA) can learn to adjust these aspects of gait to reduce fall risk.
Objectives: The aims were to examine the possibility of using wearable step width haptic biofeedback to enhance gait stability and reduce fall risk in individuals with SCA.
ACS Appl Mater Interfaces
January 2025
Zhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization, School of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China.
High-energy electron beam exposure is generally recognized as the standard for achieving high-precision nanofabrication. Low-energy electron beam exposure techniques offer advantages in 3D manufacturing; however, they have received limited attention in traditional processes due to precision limitations and insufficient exposure, leading to an underestimation of their potential. In this article, we introduce a nanofabrication strategy using low-energy electrons in ice-assisted electron-beam lithography (iEBL) alleviating the compatibility issue between resolution and quasi-3D manufacturing.
View Article and Find Full Text PDFJ Biomech
January 2025
Department of Kinesiology, The Pennsylvania State University, University Park, PA 16802, USA. Electronic address:
Most often, gait biomechanics is studied during straight-ahead walking. However, real-life walking imposes various lateral maneuvers people must navigate. Such maneuvers challenge people's lateral balance and can induce falls.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Department of Mechatronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China.
Molecules
December 2024
Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea.
Ternary InGaP quantum dots (QDs) have emerged as promising materials for efficient blue emission, owing to their tunable bandgap, high stability, and superior optoelectronic properties. However, most reported methods for Ga incorporation into the InP structure have predominantly relied on cation exchange in pre-grown InP QDs at elevated temperatures above 280 °C. This is largely due to the fact that, when heating In and P precursors in the presence of Ga, an InP/GaP core-shell structure readily forms.
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