AI Article Synopsis
- The study utilized coaxial arc plasma deposition (CAPD) to create heterojunctions of n-type silicon and boron-doped p-type ultrananocrystalline diamond.
- Measurement of dark current density-voltage curves at room temperature allowed for the extraction of key junction parameters like series resistance, ideality factor, and barrier height using both Cheung and Norde methods.
- The AC impedance characteristics revealed single semicircular patterns in the real and imaginary components, indicating a specific equivalent electrical circuit model consisting of resistance, capacitance, and a constant phase element for the heterojunctions.
Article Abstract
Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature in order to calculate the requisite junction parameters using the Cheung and Norde approaches. For the calculation based on the Cheung approach, the series resistance (), ideality factor () and barrier height () were 4.58 kΩ, 2.82 and 0.75 eV, respectively. The values of and were in agreement with those calculated using the Norde approach. Their characteristics for alternative current impedance at different frequency values were measured and analyzed as a function of the voltage (V) values ranging from 0 V to 0.5 V. Appearance of the real (') and imaginary (″) characteristics for all values presented single semicircles. The centers of the semicircular curves were below the ' axis and the diameter of the semicircles decreased with increments of the value. The proper equivalent electrical circuit model for the manufactured heterojunction behavior was comprised of combined with the parallel circuit of resistance and constant phase element.
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| http://dx.doi.org/10.1166/jnn.2020.17838 | DOI Listing |
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