Here we firstly report the pressure-induced superconductivity in phase change materials SnSbTe. Single crystals of SnSbTe were grown using a conventional melting-down method. The resistance under pressure was measured using an originally designed diamond anvil cell with boron-doped diamond electrodes. The temperature dependence of the resistance under different pressures has been measured up to 32.6 GPa. The superconducting transition of SnSbTe appeared at 2.1 K ([Formula: see text]) under 8.1 GPa, which was further increased with applied pressure to a maximum onset transition temperature 7.4 K under 32.6 GPa.
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http://dx.doi.org/10.1088/1361-648X/ab76e2 | DOI Listing |
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