New highly sensitive direct methods for the early detection of peptides involved in Alzheimer's disease (AD) are required in order to prolong effective and healthy memory and thinking capabilities and also to stop the factors resulting in AD. In this contribution, we report the successful demonstration of a label-free approach for the detection of amyloid-beta (Aβ) peptides by highly selective aptamers immobilized onto the SiO surface of the fabricated sensors. A modified single-stranded deoxyribonucleic acid (ssDNA) aptamer was specially designed and synthesized to detect the target amyloid beta-40 sequence (Aβ-40). Electrolyte-insulator-semiconductor (EIS) structures as well as silicon (Si) nanowire (NW) field-effect transistors (FETs) covered with a thin SiO dielectric layer have been successfully functionalized with Aβ-40-specific aptamers and used to detect ultra-low concentrations of the target peptide. The binding of amyloid-beta peptides of different concentrations to the surface of the sensors varied in the range from 0.1 pg/ml to 10 μg/ml resulting in a change of the surface potential was registered by the fabricated devices. Moreover, we show that the single-trap phenomena observed in the novel Si two-layer (TL) NW FET structures with advanced characteristic parameters can be effectively used to increase the sensitivity of nanoscale sensors. The obtained experimental data demonstrate a highly sensitive and reliable detection of ultra-low concentrations of the Aβ-40 peptides. This opens up prospects for the development of real-time electrical biosensors for studying and understanding different stages of AD by utilizing Si TL NW FET structures fabricated on the basis of cost-efficient CMOS-compatible technology.
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http://dx.doi.org/10.1016/j.bios.2020.112053 | DOI Listing |
Biosens Bioelectron
April 2020
Bioelectronics (ICS-8), Forschungszentrum Jülich, 52425, Jülich, Germany. Electronic address:
New highly sensitive direct methods for the early detection of peptides involved in Alzheimer's disease (AD) are required in order to prolong effective and healthy memory and thinking capabilities and also to stop the factors resulting in AD. In this contribution, we report the successful demonstration of a label-free approach for the detection of amyloid-beta (Aβ) peptides by highly selective aptamers immobilized onto the SiO surface of the fabricated sensors. A modified single-stranded deoxyribonucleic acid (ssDNA) aptamer was specially designed and synthesized to detect the target amyloid beta-40 sequence (Aβ-40).
View Article and Find Full Text PDFNano Lett
November 2018
Bioelectronics (ICS-8) , Forschungszentrum Jülich , 52428 Jülich , Germany.
We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed.
View Article and Find Full Text PDFSmall
January 2018
Bioelectronics (ICS-8), Forschungszentrum Jülich, 52425, Jülich, Germany.
In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley-Read-Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment.
View Article and Find Full Text PDFNano Lett
June 2014
Peter Grünberg Institute(PGI-8), Forschungszentrum Jülich , Jülich 52425, Germany.
Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential.
View Article and Find Full Text PDFAppl Opt
April 2011
Optical Trapping Lab--Grup de Biofotònica, Departament de Física Aplicada i Òptica, Universitat de Barcelona (UB), Martí i Franqués 1, Barcelona 08028, Spain.
In this study, we present a method designed to generate dynamic holograms in holographic optical tweezers. The approach combines our random mask encoding method with iterative high-efficiency algorithms. This hybrid method can be used to dynamically modify precalculated holograms, giving them new functionalities-temporarily or permanently-with a low computational cost.
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