Optoelectronic retinal prostheses transduce light into electrical current for neural stimulation. We introduce a novel optoelectronic pixel architecture consisting of a vertically integrated photo junction-field-effect transistor (Photo-JFET) and neural stimulating electrode. Experimental measurements demonstrate that optically addressed Photo-JFET pixels utilize phototransistive gain to produce a broad range of neural stimulation current and can effectively stimulate retinal neurons in vitro. The compact nature of the Photo-JFET pixel can enable high resolution retinal prostheses with the smallest reported optoelectronic pixel size to help restore high visual acuity in patients with degenerative retinal diseases.
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http://dx.doi.org/10.1364/BOE.11.000055 | DOI Listing |
Sci Rep
January 2025
Institute for Functional Matter and Quantum Technologies, University of Stuttgart, 70569, Stuttgart, Germany.
Inverse design via topology optimization has led to innovations in integrated photonics and offers a promising way for designing high-efficiency on-chip couplers with a minimal footprint. In this work, we exploit topology optimization to design a compact vertical coupler incorporating a bottom reflector, which achieves sub-decibel coupling efficiency on the 220-nm silicon-on-insulator platform. The final design of the vertical coupler yields a predicted coupling efficiency of -0.
View Article and Find Full Text PDFNanotechnology
January 2025
Kwangwoon University, 20 Kwangwoonro Nowon-Gu Seoul, Nowon-gu, 01897, Korea (the Republic of).
To implement a neuromorphic computing system capable of efficiently processing vast amounts of unstructured data, a significant number of synapse and neuron devices are needed, resulting in increased area demands. Therefore, we developed a nanoscale vertically structured synapse device that supports high-density integration. To realize this synapse device, the interface effects between the resistive switching layer and the electrode were investigated and utilized.
View Article and Find Full Text PDFNanoscale Horiz
January 2025
London Centre for Nanotechnology, 19 Gordon St, London, WC1H 0AH, UK.
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS). Semiconductor-oxide heterostructures are achieved by low temperature (<300 °C) thermal oxidation of HfS under dry conditions, carefully controlling process parameters. The resulting HfOS/HfS heterostructures are integrated between metal contacts, forming vertical crossbar devices.
View Article and Find Full Text PDFFront Sports Act Living
January 2025
Sports Science Research Studies, Rey Juan Carlos University, Fuenlabrada, Madrid, Spain.
Introduction: The aim of this study was to evaluate the effect of an Athletic Performance Program (APP), implemented as a complement to the usual training routines of a professional football team, on match performance variables in professional football players. The APP was designed to target mobility, stability, strength, multidirectional and sprint skills, which are critical for performance during competitive matches.
Methods: A prospective quasi-experimental study was conducted over three consecutive seasons.
ACS Appl Mater Interfaces
January 2025
Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, China.
Faraday cages are extensively utilized in plasma-based etching and deposition processes to regulate ion behavior due to their shielding effect on electromagnetic fields. Herein, vertical silicon nanopillar arrays are fabricated through SF and O reactive ion etching. By incorporation of a Faraday cage in the plasma equipment, the impact of the Faraday cage on the morphology of the silicon nanopillars is analyzed; the Faraday cage blocks out the sputtered particles and eradicates the formation of silicon nanograss.
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