AI Article Synopsis
- ALD enables precise control over thin film deposition at the atomic level, but deviations from ideal growth can occur due to various interactions.
- Understanding the mechanisms of precursor chemisorption and diffusion is essential for improving ALD growth control.
- By recognizing how these processes influence material growth, researchers can better design ALD parameters for optimal results.
Article Abstract
Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the deposition of thin films. However, several physical and chemical phenomena can occur which cause deviation from "ideal" film growth during ALD. Understanding the underlying mechanisms that cause these deviations is important to achieving even better control over the growth of the deposited material. Herein, we review several precursor chemisorption mechanisms and the effect of chemisorption on ALD growth. We then follow with a discussion on diffusion and its impact on film growth during ALD. Together, these two fundamental processes of chemisorption and diffusion underlie the majority of mechanisms which contribute to material growth during a given ALD process, and the recognition of their role allows for more rational design of ALD parameters.
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| http://dx.doi.org/10.1063/1.5133390 | DOI Listing |
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