Narrow Band Gap Observed in a Molecular Ferroelastic: Ferrocenium Tetrachloroferrate.

J Am Chem Soc

Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics , Southeast University, Nanjing 211189 , People's Republic of China.

Published: February 2020

Due to the intriguing chemical variability and structure-property flexibility, molecular materials with striking multifunctional characteristics, including tunable physical, chemical, optical, and electronic properties, have aroused wide attention. Recently, great advances have also been made in designing molecular ferroelastics with optoelectronic properties. However, the band gaps of the most typical ferroelastics are far in excess of 2.0 eV, which severely hinder their further applications. And this corresponds to the inherent incompatibility of ferroelastics. Herein we report an organometallic compound, ferrocenium tetrachloroferrate (), undergoing a ferroelastic phase transition at 407.7 K with a large spontaneous strain of 0.1088. To the best of our knowledge, this is the first molecular ferroelastic with such a high Curie temperature () and narrow band gap of 1.61 eV. UV-vis absorption spectra and density-functional theory (DFT) calculation confirm this band gap. The band gap of is determined by both the ferrocenium and the tetrachloroferrate components. The ideal semiconducting characteristic makes a breakthrough in the inherent incompatibility with ferroelastics. This will inspire an intriguing and further research in molecular ferroelastics with ideal semiconductor characteristics and hold great potential for the utilization in optoelectronic devices, especially the photovoltaic applications.

Download full-text PDF

Source
http://dx.doi.org/10.1021/jacs.9b13446DOI Listing

Publication Analysis

Top Keywords

band gap
16
ferrocenium tetrachloroferrate
12
narrow band
8
molecular ferroelastic
8
molecular ferroelastics
8
inherent incompatibility
8
incompatibility ferroelastics
8
molecular
5
ferroelastics
5
gap
4

Similar Publications

Context: This study systematically investigated the effects of single S-atom vacancy defects and composite defects (vacancy combined with doping) on the properties of MoS using density functional theory. The results revealed that N-doped S-vacancy MoS has the smallest composite defect formation energy, indicating its highest stability. Doping maintained the direct band gap characteristic, with shifts in the valence band top.

View Article and Find Full Text PDF

Covalent organic frameworks (COFs) are often employed in oxygen reduction reactions (ORR) for hydrogen peroxide production due to their tunable structures and compositions. However, COF electrocatalysts require precise structural engineering, such as heteroatoms or metal site doping, to modulate the reaction pathway during the ORR process. In this work, we designed a tetraphenyl-p-phenylenediamine based COF electrocatalyst, namely TPDA-BDA, which exhibited excellent two-electron (2e) ORR performance with high H2O2 selectivity of 89.

View Article and Find Full Text PDF

High Stability, Piezoelectric Response, and Promising Photocatalytic Activity on the New Pentagonal CGeP Monolayer.

ACS Phys Chem Au

January 2025

Modeling and Molecular Simulation Group, São Paulo State University (UNESP), School of Sciences, Bauru 17033-360, Brazil.

This study introduces the penta-structured semiconductor p-CGeP through density functional theory simulations, which possesses an indirect band gap transition of 3.20 eV. Mechanical analysis confirms the mechanical stability of p-CGeP, satisfying Born-Huang criteria.

View Article and Find Full Text PDF

NbO(OH) has emerged as a highly attractive photocatalyst based on its chemical stability, energetic band positions, and large active lattice sites. Compared to other various photocatalytic semiconductors, it can be synthesized easily. This study presents a systematic analysis of pristine and doped NbO(OH) based on recent developments in related research.

View Article and Find Full Text PDF

In this work, we investigate the electronic and magnetic properties of the InSe monolayer enriched by doping with IVA-group (Si and Ge) and VA-group (P and As) atoms. Both In and Se sublattices are considered as doping sites to realize n- and p-type doping (X@InSe and X@InSe systems, X = Si, Ge, P, and As), respectively. The pristine InSe monolayer is an indirect gap semiconductor with a band gap of 1.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!