Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation.

The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈10 cm/Vs) is experimentally examined as a function of incident microwave power at a fixed bath temperature. The experimental results indicate that the narrow negative magnetoresistance effect exhibits substantially increased broadening with increasing microwave intensity. These magnetoresistance data were subjected to lineshape fits to extract possible variation of characteristic lengths with microwave intensity; the results suggest that characteristic lengths decrease by up to 50% upon increasing microwave power up to about 8 mW. We also examine the change in effective electron temperature, T, due to the photo-excitation in the absence of a magnetic field. Combining these results suggests a correlation between electron heating and the observed change in the fit extracted characteristic lengths.