We propose an experimental realization of the spin Hall effect in graphene by illuminating a graphene sheet on top of a substrate with circularly polarized monochromatic light. The substrate induces a controllable Rashba type spin-orbit coupling which breaks the spin-degeneracy of the Dirac cones but it is gapless. The circularly polarized light induces a gap in the spectrum and turns graphene into a Floquet topological insulator with spin dependent edge states. By analyzing the high and intermediate frequency regimes, we find that in both parameter limits, the spin-Chern number can be tuned by the effective coupling strength of the charge particles to the radiation field and determine the condition for the photoinduced topological phase transition.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1088/1361-648X/ab6cc0 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Spin transport properties in a topological insulator sandwiched between two-dimensional magnetic layers.
Sci Rep
January 2025
Department of Applied Physics, School of Engineering Sciences, KTH Royal Institute of Technology, AlbaNova University Center, SE-10691, Stockholm, Sweden.
Non-trivial band topology along with magnetism leads to different novel quantum phases. When time-reversal symmetry is broken in three-dimensional topological insulators (TIs) through, e.g.
View Article and Find Full Text PDFEnhancing valley splitting and anomalous valley Hall effect in the V-doped Janus MoSeTe monolayer.
Phys Chem Chem Phys
January 2025
School of Physics and Electrical Engineering, Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei Longzhong Laboratory, Hubei University of Arts and Science, Xiangyang, Hubei, 441053, China.
Exploring valleytronics in two-dimensional materials is of great significance for the development of advanced information devices. In this study, we investigate the valley polarization and electronic properties of V-doped 2H-phase Janus MoSeTe by using first-principles calculations. Our results reveal a remarkable valley spin splitting up to 60 meV, driven by the breaking of time-reversal symmetry due to the magnetic effect of V 3d orbitals.
View Article and Find Full Text PDFAnomalous Hall spin current drives self-generated spin-orbit torque in a ferromagnet.
Nat Nanotechnol
January 2025
Department of Physics and Astronomy, University of California, Irvine, CA, USA.
Spin-orbit torques enable energy-efficient manipulation of magnetization by electric current and hold promise for applications ranging from non-volatile memory to neuromorphic computing. Here we report the discovery of a giant spin-orbit torque induced by anomalous Hall current in ferromagnetic conductors. This anomalous Hall torque is self-generated as it acts on the magnetization of the ferromagnet that engenders the torque.
View Article and Find Full Text PDFAll-Optical Single-Channel Plasmonic Logic Gates.
Nano Lett
January 2025
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
Optical computing, renowned for its light-speed processing and low power consumption, typically relies on the coherent control of two light sources. However, there are challenges in stabilizing and maintaining high optical spatiotemporal coherence, especially for large-scale computing systems. The coherence requires rigorous feedback circuits and numerous phase shifters, introducing system instability and complexity.
View Article and Find Full Text PDFControllable -Polarized Spin Current in Artificially Structured Ferromagnetic Oxide with Strong Spin-Orbit Coupling.
Nano Lett
January 2025
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Realizing field-free switching of perpendicular magnetization by spin-orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicate fabrication and affect device stability and scalability. Here, we propose a novel approach using -polarized spin currents for deterministic switching of perpendicular magnetization through interfacial engineering.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!