Mercury ion (Hg), a bioaccumulating and toxic heavy metal, can cause severe damages to the environment and human health. Therefore, development of high-performance Hg sensors is highly desirable. Herein, we construct a uniform dodecahedral shaped N-doped carbon decorated by single Fe site enzyme (Fe-N-C SAE), which exhibits good performance for Hg detection. The N atom on Fe-N-C SAE can specifically recognize Hg through chelation between Hg and N atom, while the catalytic site on the single-atom enzyme acts as a signal amplifier. The Fe-N-C SAE-functionalized solution-gated graphene transistor exhibits a dramatic improvement in the selectivity and sensitivity of the devices. The sensor can rapidly detect Hg down to 1 nM within 2 s. Besides, a relatively good repeatability and reproducibility for the detection of Hg have also been found in our sensor platform. Our findings expand the application of single-atom catalysts in the field of food safety and environmental monitoring.
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http://dx.doi.org/10.1021/acsami.9b19434 | DOI Listing |
Biosens Bioelectron
January 2025
School of Food and Biological Engineering, Hefei University of Technology, Hefei, Anhui, 230009, China; Engineering Research Center of Bio-process, Ministry of Education, Hefei University of Technology, Hefei, 230009, China. Electronic address:
As obesity rates continue to rise, there is an increasing focus on reducing obesity through exercise. People are becoming more aware of the importance of weight loss through physical activity. However, the effectiveness of exercise can vary significantly among individuals, making it challenging to evaluate its impact.
View Article and Find Full Text PDFAdv Mater
December 2024
Institute of Physical Chemistry, Friedrich Schiller University Jena, 07743, Jena, Germany.
Due to their ultra-high sensitivity, solution-gated graphene-based field-effect transistors (SG-GFET) have been proposed for applications in bio-sensing. However, challenges regarding the functionalization of GFETs have prevented their applications in clinical diagnostics so far. Here GFET sensors based on van der Waals (vdW) heterostructures of single-layer graphene layered with a molecular ≈1 nm thick carbon nanomembrane (CNM) are presented.
View Article and Find Full Text PDFJ Phys Chem Lett
October 2024
Université Paris Cité, CNRS, ITODYS, F-75013 Paris, France.
Guanine quadruplexes (G4s) are nucleic acid structures present in diverse regions of the genome, such as telomeres and transcription initiators. Recently, the different biological roles of G4s have been evidenced as well as their role as biomarkers for tumors or viral infections. However, the fast and efficient detection of G4s in complex matrices remains elusive.
View Article and Find Full Text PDFSmall
November 2024
State Key Laboratory of Toxicology and Medical Countermeasures and Laboratory of Toxicant Analysis, Institute of Pharmacology and Toxicology, Academy of Military Medical Sciences, Beijing, 100850, China.
Solution Gated Graphene Field-Effect Transistors (SGGT) are eagerly anticipated as an amplification platform for fabricating advanced ultra-sensitive sensors, allowing significant modulation of the drain current with minimal gate voltage. However, few studies have focused on light-matter interplay gating control for SGGT. Herein, this challenge is addressed by creating an innovative photoelectrochemical solution-gated graphene field-effect transistor (PEC-SGGT) functionalized with enzyme cascade reactions (ECR) for Organophosphorus (OPs) detection.
View Article and Find Full Text PDFACS Sustain Chem Eng
June 2024
Institute of Microelectronics of Barcelona (IMB-CNM, CSIC), Campus UAB, Bellaterra 08193, Spain.
The persistence of photoresist residues from microfabrication procedures causes significant obstacles in the technological advancement of graphene-based electronic devices. These residues induce undesired chemical doping effects, diminish carrier mobility, and deteriorate the signal-to-noise ratio, making them critical in certain contexts, including sensing and electrical recording applications. In graphene solution-gated field-effect transistors (gSGFETs), the presence of polymer contaminants makes it difficult to perform precise electrical measurements, introducing response variability and calibration challenges.
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