AI Article Synopsis
- A method for creating (111)-oriented nanotwinned copper (nt-Cu) via direct current electroplating has been developed and analyzed.
- X-ray diffraction results indicate that, as the temperature increases during annealing, the (200) signal's intensity rises while the (111) signal's intensity decreases, suggesting changes in grain structure.
- The average grain size of the nt-Cu increased significantly after annealing, making it a promising material for use in electrical applications like interconnects and 3D integrated circuit packaging.
Article Abstract
We have reported a method of fabricating (111)-orientated nanotwinned copper (nt-Cu) by direct current electroplating. X-ray analysis was performed for the samples annealed at 200 to 350 °C for an hour. X-ray diffraction indicates that the (200) signal intensity increases while (111) decreases. Abnormal grain growth normally results from transformation of surface energy or strain energy density. The average grain size increased from 3.8 µm for the as-deposited Cu films to 65-70 µm after the annealing at 250 °C for 1 h. For comparison, no significant grain growth behavior was observed by random Cu film after annealing for an hour. This research shows the potential for its broad electric application in interconnects and three-dimensional integrated circuit (3D IC) packaging.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6981876 | PMC |
| http://dx.doi.org/10.3390/ma13010134 | DOI Listing |
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