In this study, near-infrared (NIR) -polarized (P-state) light is created from the transmission ray of monoclinic multilayer GaTe near the band edge. The P-state transmittance photons are produced via the transmission light of a ribbonlike multilayer GaTe with a plurality of nanowire grids being parallel and constructed along the direction ( axis) from 1.56 to 1.62 eV. At 300 K, a P-state excitonic emission at 1.652 eV can be clearly detected in polarized microphotoluminescence (μPL) measurement. The free-exciton extinction energy and recombination lifetime of the band-edge exciton are evaluated and determined to be Δ = 32 ± 4 meV and τ ≈ 0.032 ns, respectively, for the multilayer GaTe. Polarized microthermoreflectance (μTR) measurement also verifies that the -polarized transition is allowed while -polarized (S-state) transition is forbidden in the multilayer GaTe. An asymmetric p-to-p transition along the polarization is thus inferred to comprise the band edge of multilayer GaTe to form in-plane optical anisotropy.
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