The joint density functional theory (JDFT) is applied in the context of the grand canonical Kohn-Sham theory to calculate the global and local softness of pristine and N-substituted graphene structures. A comparison is established between the different theoretical approaches to evaluate total capacitance, revealing that the JDFT approach presents the closest result of this property with experimental data. A model of series capacitors is used to determine the quantum and nonquantum contributions of total capacitance, which enables us to determine the limitations of the rigid band approximation for the studied systems. It is found that global chemical softness is proportional to the total capacitance measured in the experiments, when the geometry relaxation is neglected. In this context, it is possible to obtain quantum and total capacitance (and consequently softness) from an average number of electrons vs applied potential plots and the model of series capacitors. Likewise, the relation of capacitance and softness gives rise to a new definition of local capacitance within the JDFT formalism. The evaluation of global and local softness paves the way to analyze electrochemical surface reactivity as a function of applied potential for a solid-electrolyte interface.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1021/acs.jpca.9b10885 | DOI Listing |
Phys Rev Lett
December 2024
Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology, Dalian 116024, People's Republic of China.
We present a novel resonance mode in capacitive radio frequency (rf) discharges in the presence of an oblique magnetic field at low pressures. We observe the self-excitation of high-frequency harmonics of the current in magnetized capacitive rf discharges through the magnetized plasma series resonance (MPSR) induced by applying a low-frequency power. Utilizing an equivalent circuit model, we reveal that these harmonics arise from the hybrid combination of the magnetic gyration of electrons and the PSR.
View Article and Find Full Text PDFEnviron Sci Technol
December 2024
Shenzhen Key Laboratory of Interfacial Science and Engineering of Materials, State Environmental Protection Key Laboratory of Integrated Surface Water-Groundwater Pollution Control, Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, SUSTech Energy Institute for Carbon Neutrality, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Seawater desalination via electrochemical battery deionization (BDI) has shown significant potential for freshwater production. However, its widespread application has been limited by the high energy costs involved. To facilitate the commercialization of BDI technology, it is crucial to develop innovative integrated BDI systems that utilize sustainable energy sources and assess their practical performance for desalination of natural seawater.
View Article and Find Full Text PDFJ Phys Chem C Nanomater Interfaces
December 2024
Physics Department, Durham University, Durham DH1 3LE, U.K.
The organization and dynamics of ions and water molecules at electrified solid-liquid interfaces are generally well understood under static fields, especially for macroscopic electrochemical systems. In contrast, studies involving alternating (AC) fields tend to be more challenging. In nanoscale systems, added complexity can arise from interfacial interactions and the need to consider ions and molecules explicitly.
View Article and Find Full Text PDFScience
December 2024
Device Research Center, Samsung Advanced Institute of Technology, Suwon, Korea.
The advancement in semiconductor technology through the integration of more devices on a chip has reached a point where device scaling alone is no longer an efficient way to improve the device performance. One issue lies in the interconnects connecting the transistors, in which the resistivity of metals increases exponentially as their dimensions are scaled down to match those of the transistors. As a result, the total signal processing delay is dominated by the resistance-capacitance (RC) delay from the interconnects rather than the delay from the transistors' switching speed.
View Article and Find Full Text PDFNano Lett
December 2024
School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China.
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!