Characterization and Optimization of Silver-Modified InCdS-Based Photocatalysts.

ACS Omega

Department of Chemical Engineering, Feng Chia University, Taichung 40724, Taiwan.

Published: December 2019

AI Article Synopsis

  • The research focused on using scanning electrochemical microscopy to analyze various M (InCd) S photocatalyst arrays, with the goal of improving photoelectrochemical reactions.
  • Doping the InCdS electrode with 30% Ag created the Ag(InCd)S electrode, which achieved the highest photocurrent (1 mA/cm under UV-visible light), outperforming the standard InCdS electrode.
  • The study concluded that the superior photocatalytic performance of Ag(InCd)S stemmed from its better crystalline structure, which facilitated efficient charge separation and minimized charge recombination in the heterojunction.

Article Abstract

In this research, we performed scanning electrochemical microscopy to screen M (InCd) S (M = V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Mo, Ru, Ag, W, Ir, Pt, and Te) photocatalyst arrays for efficient photoelectrochemical reaction. Doping 30% Ag to form the Ag(InCd)S electrode could result in the highest photocurrent, and also, the anode photocurrents were found to be 1 and 0.53 mA/cm under UV-visible and visible light, respectively, comparatively higher than that of the InCdS electrode (0.45 and 0.25 mA/cm). The highest incident photo-to-current conversion efficiency of the Ag(InCd)S photocatalyst and InCdS were found to be 64% (λ = 450 nm) and 57% (λ = 400 nm), respectively. The Mott-Schottky plots showed that InCdS and Ag(InCd)S photoelectrodes could exhibit a flat-band potential of -0.85 and -0.55 V versus Ag/AgCl, respectively. Based on these findings, the superior photocatalytic activity of the Ag(InCd)S photoelectrode was mainly attributed to its high crystalline structure for efficient charge separation and reduction of charge recombination in the heterojunction of Ag(InCd)S and AgS.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6921614PMC
http://dx.doi.org/10.1021/acsomega.9b02685DOI Listing

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