Half-metallic Heusler alloys are attracting considerable attention because of their unique half-metallic band structures, which exhibit high spin polarization and yield huge magnetoresistance ratios. Besides serving as ferromagnetic electrodes, Heusler alloys also have the potential to host spin-charge conversion. Here, we report on the spin-charge conversion effect in the prototypical Heusler alloy NiMnSb. An unusual charge signal was observed with a sign change at low temperature, which can be manipulated by film thickness and ordering structure. It is found that the spin-charge conversion has two contributions. First, the interfacial contribution causes a negative voltage signal, which is almost constant versus temperature. The second contribution is temperature dependent because it is dominated by minority states due to thermally excited magnons in the bulk part of the film. This work provides a pathway for the manipulation of spin-charge conversion in ferromagnetic metals by interface-bulk engineering for spintronic devices.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6910839 | PMC |
| http://dx.doi.org/10.1126/sciadv.aaw9337 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature.
Nat Commun
October 2024
Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.
Current silicon-based CMOS devices face physical limitations in downscaling size and power loss, restricting their capability to meet the demands for data storage and information processing of emerging technologies. One possible alternative is to encode the information in a non-volatile magnetic state and manipulate this spin state electronically, as in spintronics. However, current spintronic devices rely on the current-driven control of magnetization, which involves Joule heating and power dissipation.
View Article and Find Full Text PDFGraphene-Templated Achiral Hybrid Perovskite for Circularly Polarized Light Sensing.
ACS Appl Mater Interfaces
October 2024
Department of Low-dimensional Systems, J. Heyrovsky Institute of Physical Chemistry of the Czech Academy of Sciences, Dolejšková 2155/3, 18223 Prague, Czech Republic.
This study points out the importance of the templating effect in hybrid organic-inorganic perovskite semiconductors grown on graphene. By combining two achiral materials, we report the formation of a chiral composite heterostructure with electronic band splitting. The effect is observed through circularly polarized light emission and detection in a graphene/α-CH(NH)PbI perovskite composite, at ambient temperature and without a magnetic field.
View Article and Find Full Text PDFInverse Spin Hall Effect Dominated Spin-Charge Conversion in (101) and (110)-Oriented RuO_{2} Films.
Phys Rev Lett
July 2024
National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University and Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China.
Utilizing spin pumping, we present a comparative study of the spin-charge conversion in RuO_{2}(101) and RuO_{2}(110) films. RuO_{2}(101) shows a robust in-plane crystal-axis dependence, whereas RuO_{2}(110) exhibits an isotropic but stronger one. Symmetry-based analysis and first-principles calculations reveal that the spin-charge conversion in RuO_{2}(110) originates from the inverse spin Hall effect (ISHE) due to nodal lines splitting.
View Article and Find Full Text PDFSpin-Charge Conversion in Chiral Polymers with Hopping Conduction.
J Phys Chem Lett
August 2024
Sivananthan Laboratories, Bolingbrook, Illinois 60440, United States.
Organic and biological materials are often chiral. Chiral polymers, as recent experiments indicate, facilitate spin-charge conversion: a charge current results in a spin polarization and vice versa, dubbed chirality-induced spin selectivity (CISS) and inverse CISS (ICISS). While CISS/ICISS in crystalline chiral systems such as tellurium can be understood in terms of their chirality- and spin-dependent band structure, such a picture becomes inapplicable to disordered chiral polymers, where carrier transport is via hopping rather than band conduction.
View Article and Find Full Text PDFTwist Proximity-Endowed Large Figure of Merit in a Band-Modulated CrI/1T-MoS Moiré Superlattice.
ACS Appl Mater Interfaces
July 2024
Department of Physics, Tezpur University (Central University), Tezpur 784028, India.
Moiré superlattices with a robust twist proximity effect in the low-dimensional regime can facilitate nanoscale thermoelectric devices. In pristine systems, the low efficiency and lack of proficient control of thermoelectric properties impede desirable advancements in the field of energy conversion. In the present study, we demonstrate remarkable macroscopic thermoelectric response as a consequence of microscopic band structure modulation via the twist proximity in an engineered CrI/1T-MoS moiré superlattice.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!