The Ge-Bi-Se thin films of varied compositions (Ge content 0-32.1 at. %, Bi content 0-45.7 at. %, Se content 54.3-67.9 at. %) have been prepared by rf magnetron (co)-sputtering technique. The present study was undertaken in order to investigate the clusters generated during the interaction of laser pulses with Ge-Bi-Se thin films using laser ablation time-of-flight mass spectrometry. The stoichiometry of the clusters was determined in order to understand the individual species present in the plasma plume. Laser ablation of Ge-Bi-Se thin films accompanied by ionization produces about 20 positively and/or negatively charged unary, binary and ternary (Ge, Bi, Se, GeSe, BiSe and GeBiSe) clusters. Furthermore, we performed the laser ablation experiments of Ge:Bi:Se elemental mixtures and the results were compared with laser ablation time-of-flight mass spectrometry analysis of thin films. Moreover, to understand the geometry of the generated clusters, we calculated structures of some selected binary and ternary clusters using density functional theory. The generated clusters and their calculated possible geometries can give important structural information, as well as help to understand the processes present in the plasma processes exploited for thin films deposition.
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http://dx.doi.org/10.1038/s41598-019-55773-9 | DOI Listing |
Nanoscale Horiz
December 2024
Aerospace Engineering, Khalifa University of Science and Technology, 127788, Abu Dhabi, United Arab Emirates.
Two-dimensional (2D) materials are materials with a thickness of one or a few atoms with intriguing electrical, chemical, optical, electrochemical, and mechanical properties. Therefore, they are deemed candidates for ubiquitous engineering applications. Films and three-dimensional (3D) structures made from 2D materials introduce a distinct assembly structure that imparts the inherent properties of pristine 2D materials on a macroscopic scale.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Institute of Optoelectronics Technology, Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Beijing 100044, China.
This work explores the carrier recombination dynamics of AC-driven quantum dot (QD) light-emitting diodes (AC-QLEDs) and proposes their application in the field of electric field contactless detection. Different sequences of green QD (GQD)/red QD (RQD) bilayer thin films as the emission layer of AC-QLEDs were fabricated via film transfer printing to ensure the complete morphology of each layer. AC-QLEDs with the emission layer as the sequence of GQD + RQD (GR-QLEDs) show a significantly enhanced carrier recombination efficiency due to its stable energy level structure, achieving the highest peak brightness ever recorded for vertically emitting brightness of 1648.
View Article and Find Full Text PDFJ Phys Chem Lett
December 2024
School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210023, China.
NiO is a wide-bandgap p-type metal oxide that has extensive applications in optoelectronics and photocatalysts. Understanding the carrier dynamics in p-type NiO is pivotal for optimizing device performance, yet they remain largely unexplored. In this study, we employed femtosecond transient absorption spectroscopy to delve into the dynamics of photogenerated carriers in NiO films containing distinct prominent native defects: undoped NiO with oxygen vacancies () and O-rich NiO (denoted as NiO) with nickel vacancies ().
View Article and Find Full Text PDFUltrasonics
December 2024
Universidad Carlos III de Madrid, Avenida de la Universidad, 30, Leganes, Madrid, Spain.
The most common transducers used to generate ultrasound in medical applications are based on short electrical pulses applied to piezoelectric transducers and capacitive micromachined ultrasound transducers. However, piezoelectric transducers have a limited frequency bandwidth, defined by their physical thickness, and capacitive micromachined ultrasound transducers have poor transmission efficiency. The high frequency cutoff limits the spatial resolution of ultrasonic images.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
Achieving precise and cost-effective etching in the field of silicon three-dimensional (3D) structure fabrication remains a significant challenge. Here, we present the successful fabrication of microscale anisotropic Si structures with an etching anisotropy of 0.73 using Cu-metal-assisted chemical etching (Cu-MACE) and propose a mechanism to elucidate the chemical behavior of Cu within the MACE solution.
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