AI Article Synopsis
- Ferroelectric domain walls in freestanding complex oxide thin films move much slower compared to when they are bonded to a substrate.
- The slowing down is linked to structural ripples and flexoelectric effects in the freestanding films, rather than changes in epitaxial strain.
- However, the local static ferroelectric properties of the films' layers show only minor changes, primarily influenced by the compressive strain from the original epitaxy.
Article Abstract
Ferroelectric domain walls in single-crystal complex oxide thin films are found to be orders of magnitude slower when the interfacial bonds with the heteroepitaxial substrate are broken to create a freestanding film. This drastic change in domain wall kinetics does not originate from the alteration of epitaxial strain; rather, it is correlated with the structural ripples at mesoscopic length scale and associated flexoelectric effects induced in the freestanding films. In contrast, the effects of the bond-breaking on the local static ferroelectric properties of both top and bottom layers of the freestanding films, such as domain wall width and spontaneous polarization, are modest and governed by the change in epitaxy-induced compressive strain.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/adma.201907036 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!