UV-Visible Photodetector Based on I-type Heterostructure of ZnO-QDs/Monolayer MoS.

Monolayer MoS has shown excellent photoresponse properties, but its promising applications in high-sensitivity photodetection suffer from the atomic-thickness-limited adsorption and band gap-limited spectral selectivity. Here we have carried out investigations on MoS monolayer-based photodetectors with and without decoration of ZnO quantum dots (ZnO-QDs) for comparison. Compared with monolayer MoS photodetectors, the monolayer ZnO-QDs/MoS hybrid device exhibits faster response speed (1.5 s and 1.1 s, respectively), extended broadband photoresponse range (deep UV-visible), and enhanced photoresponse in visible spectrum, such as higher responsivity over 0.084 A/W and larger detectivity of 1.05 × 10 Jones, which results from considerable injection of carries from ZnO-QDs to MoS due to the formation of I-type heterostructure existing in the contact interface of them.