The two-dimensional electron liquid which forms between the band insulators LaAlO (LAO) and SrTiO (STO) is a promising component for oxide electronics, but the requirement of using single crystal SrTiO substrates for the growth limits its applications in terms of device fabrication. It is therefore important to find ways to deposit these materials on other substrates, preferably Si, or Si-based, in order to facilitate integration with existing technology. Interesting candidates are micron-sized nanosheets of CaNbO which can be used as seed layers for perovskite materials on any substrate. We have used low-energy electron microscopy (LEEM) with in-situ pulsed laser deposition to study the subsequent growth of STO and LAO on such flakes which were deposited on Si. We can follow the morphology and crystallinity of the layers during growth, as well as fingerprint their electronic properties with angle resolved reflected electron spectroscopy. We find that STO layers, deposited on the nanosheets, can be made crystalline and flat; that LAO can be grown in a layer-by-layer fashion; and that the full heterostructure shows the signature of the formation of a conducting interface.
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http://dx.doi.org/10.1038/s41598-019-53438-1 | DOI Listing |
Small Methods
October 2024
School of Materials Engineering, Purdue University, West Lafayette, Indiana, 47907, United States.
Sci Rep
February 2024
Erstes Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany.
Strain engineering beyond substrate limitation of colossal magnetoresistant thin (LaPr)CaMnO (LPCMO) films on LaAlO-buffered SrTiO (LAO/STO) substrates has been demonstrated using metalorganic aerosol deposition technique. By growing partially relaxed 7-27 nm thick heteroepitaxial LAO buffer layers on STO a perfect lattice matching to the LPCMO has been achieved. As a result, strain-free heteroepitaxial 10-20 nm thick LPCMO/LAO/STO films with bulk-like ferromagnetic metallic ground state were obtained.
View Article and Find Full Text PDFSci Rep
November 2019
Huygens - Kamerlingh Onnes Laboratorium, Leiden University, Niels Bohrweg 2, 2300, RA, Leiden, The Netherlands.
The two-dimensional electron liquid which forms between the band insulators LaAlO (LAO) and SrTiO (STO) is a promising component for oxide electronics, but the requirement of using single crystal SrTiO substrates for the growth limits its applications in terms of device fabrication. It is therefore important to find ways to deposit these materials on other substrates, preferably Si, or Si-based, in order to facilitate integration with existing technology. Interesting candidates are micron-sized nanosheets of CaNbO which can be used as seed layers for perovskite materials on any substrate.
View Article and Find Full Text PDFACS Appl Mater Interfaces
October 2017
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, Peoples' Republic of China.
Two-dimensional electron gas (2DEG) at the perovskite oxide interface exhibits a lot of exotic properties, presenting a promising platform for the exploration of emergent phenomena. While most of the previous works focused on SrTiO-based 2DEG, here we report on the fabrication of high-quality 2DEGs by growing an amorphous LaAlO layer on a (001)-orientated KTaO substrate, which is a 5d metal oxide with a polar surface, at a high temperature that is usually adopted for crystalline LaAlO. Metallic 2DEGs with a Hall mobility as high as ∼2150 cm/(V s) and a sheet carrier density as low as 2 × 10 cm are obtained.
View Article and Find Full Text PDFNano Converg
April 2016
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 151-744 Republic of Korea.
At present, the generation of heterostructures with two dimensional electron gas (2DEG) in amorphous LaAlO (a-LAO)/SrTiO (STO) has been achieved. Herein, we analysed thermal stability of 2DEG at a-LAO/STO interfaces in comparison with 2DEG at crystalline LaAlO (c-LAO)/STO interfaces. To create 2DEG at LAO/STO interface, regardless of growing temperature from 25 to 700 °C, we found that environment with oxygen deficient during the deposition of LAO overlayer is essentially required.
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