Refractometric sensors utilizing surface plasmon resonance (SPR) should satisfy a series of performance metrics, bulk sensitivity, thin-film sensitivity, refractive-index resolution, and high-Q-factor resonance, as well as practical requirements such as manufacturability and the ability to separate optical and fluidic paths via reflection-mode sensing. While many geometries such as nanohole, nanoslit, and nanoparticles have been employed, it is nontrivial to engineer nanostructures to satisfy all of the aforementioned requirements. We combine gold nanohole arrays with a water-index-matched Cytop film to demonstrate reflection-mode, high--factor ( = 143) symmetric plasmonic sensor architecture. Using template stripping with a Cytop film, we can replicate a large number of index-symmetric nanohole arrays, which support sharp plasmonic resonances that can be probed by light reflected from their backside with a high extinction amplitude. The reflection geometry separates the optical and microfluidic paths without sacrificing sensor performance as is the case of standard (index-asymmetric) nanohole arrays. Furthermore, plasmon hybridization caused by the array refractive-index symmetry enables dual-mode detection that allows distinction of refractive-index changes occurring at different distances from the surface, making it possible to identify SPR response from differently sized particles or to distinguish binding events near the surface from bulk index changes. Due to the unique combination of a dual-mode reflection-configuration sensing, high-Q plasmonic modes, and template-stripping nanofabrication, this platform can extend the utility of nanohole SPR for sensing applications involving biomolecules, polymers, nanovesicles, and biomembranes.
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http://dx.doi.org/10.1021/acssensors.9b01780 | DOI Listing |
ACS Omega
December 2024
Division of Solid-State Electronics, Department of Electrical Engineering, The Ångström Laboratory, Uppsala University, SE-751 03 Uppsala, Sweden.
Extracellular vesicles (EVs) are nanoparticles encapsulated with a lipid bilayer, and they constitute an excellent source of biomarkers for multiple diseases. However, the heterogeneity in their molecular compositions constitutes a major challenge for their recognition and profiling, thereby limiting their application as an effective biomarker. A single-EV analysis technique is crucial to both the discovery and the detection of EV subpopulations that carry disease-specific signatures.
View Article and Find Full Text PDFJ Phys Chem C Nanomater Interfaces
December 2024
Department of Chemical Engineering, Queen's University, Kingston, Ontario K7L 3N6, Canada.
Hybrid nanoplasmonic structures composed of subwavelength apertures in metallic films and nanoparticles have recently been demonstrated as ultrasensitive plasmonic sensors. This work investigates the electrokinetically driven propagation of the assembly mechanism of the metallic nanoparticles through nanoapertures. The Debye-Hückel approximation for a symmetric electrolyte solution with overlapping electrical double layers (EDLs) is used to obtain an analytical solution to the problem.
View Article and Find Full Text PDFACS Omega
November 2024
Advanced Laboratory of Electro-Optics (ALEO), Department of Applied Physics/Electro-Optics Engineering, Lev Academic Center, Jerusalem 9116001, Israel.
Plasmonic nanostructure arrays, designed for performance as pixels in an advanced SERS imaging device, were fabricated by gallium focused ion beam (FIB). Though the FIB is best suited for etching holes and negative structures, our previously reported simulations favor protrusions. Herein, we report on the FIB methodology to "sculpt" positive structures by "ion-blasting" away the surrounding material.
View Article and Find Full Text PDFIn this work, we present the monolithic integration of a TiN nanohole array and a Ge photodetector towards a CMOS compatible fabrication of a refractive index sensor in a 200 mm wafer silicon technology. We developed a technology process that enables fabrication with high yields of around 90%. Ge photodetectors with a Ge layer thickness of 450 nm and an area of 1600 µm (40 µm x 40 µm) show dark current densities of around 129 mA/cm and responsivities of 0.
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