Surface nanoscale axial photonics (SNAP) microresonators, which are fabricated by nanoscale effective radius variation (ERV) of the optical fiber with subangstrom precision, can be potentially used as miniature classical and quantum signal processors, frequency comb generators, and ultraprecise microfluidic and environmental optical sensors. Many of these applications require the introduction of nanoscale ERV with a large contrast α, which is defined as the maximum shift of the fiber cutoff wavelength introduced per unit length of the fiber axis. The previously developed fabrication methods of SNAP structures, which used focused CO and femtosecond laser beams, achieved α∼0.02  nm/μm. Here we develop a new, to the best of our knowledge, fabrication method of SNAP microresonators with a femtosecond laser, which allows us to demonstrate a 50-fold improvement of previous results and achieve α∼1  nm/μm. Furthermore, our fabrication method enables the introduction of ERV that is several times larger than the maximum ERV demonstrated previously. As an example, we fabricate a rectangular SNAP resonator and investigate its group delay characteristics. Our experimental results are in good agreement with theoretical simulations. Overall, the developed approach allows us to reduce the axial scale of SNAP structures by an order of magnitude.

Download full-text PDF

Source
http://dx.doi.org/10.1364/OL.44.005606DOI Listing

Publication Analysis

Top Keywords

femtosecond laser
12
rectangular snap
8
snap microresonators
8
snap structures
8
fabrication method
8
snap
5
snap microresonator
4
microresonator fabricated
4
fabricated femtosecond
4
laser surface
4

Similar Publications

Convergent-beam attosecond x-ray crystallography.

Struct Dyn

January 2025

Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg, Germany.

Sub-ångström spatial resolution of electron density coupled with sub-femtosecond to few-femtosecond temporal resolution is required to directly observe the dynamics of the electronic structure of a molecule after photoinitiation or some other ultrafast perturbation, such as by soft X-rays. Meeting this challenge, pushing the field of quantum crystallography to attosecond timescales, would bring insights into how the electronic and nuclear degrees of freedom couple, enable the study of quantum coherences involved in molecular dynamics, and ultimately enable these dynamics to be controlled. Here, we propose to reach this realm by employing convergent-beam x-ray crystallography with high-power attosecond pulses from a hard-x-ray free-electron laser.

View Article and Find Full Text PDF

We report lasing action in a femtosecond-laser-inscribed waveguide in thulium-doped barium-gallium-germanium oxide (BGG) glass. A laser cavity was assembled with this waveguide that provided a single-mode output of 62 mW when pumped at 1.6 µm.

View Article and Find Full Text PDF

In this Letter, we report an ultraflat high-power supercontinuum (SC) based on a low-loss short-length fluorotellurite fiber. A novel high-peak power dual-Raman soliton femtosecond laser is used as a pump source, which effectively extends the mid-infrared SC spectral range and enhances the flatness of the SC. Finally, we obtained a 10.

View Article and Find Full Text PDF

The emission of N lasing at 391 nm from 800 nm femtosecond laser filament in air at 1 atm presents significant challenges due to the quenching effect induced by oxygen molecules. We introduce a simple technique for the 391 nm N lasing emission induced by a corona electric field-assisted femtosecond filament in air. This technique greatly addresses the challenge of exciting a 391 nm lasing from 800 nm femtosecond laser filament in air at 1 atm.

View Article and Find Full Text PDF

The introduction of intermediate bands by hyperdoping is an efficient way to realize infrared light absorption of silicon. In this Letter, inert element (helium and argon for specific)-doped black silicon is obtained by helium ion-implantation followed by femtosecond pulse laser irradiation in an argon atmosphere based on near-intrinsic silicon substrates. Within the 200 nm of the silicon surface, the concentrations of helium and argon are both above the order of 10 cm.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!