The problem that is considered is that of maximizing the energy storage density of Pb-free BaTiO-based dielectrics at low electric fields. It is demonstrated that how varying the size of the combinatorial search space influences the efficiency of material discovery by comparing the performance of two machine learning based approaches where different levels of physical insights are involved. It is started with physics intuition to provide guiding principles to find better performers lying in the crossover region in the composition-temperature phase diagram between the ferroelectric phase and relaxor ferroelectric phase. Such an approach is limiting for multidopant solid solutions and motivates the use of two data-driven machine learning and design strategies with a feedback loop to experiments. Strategy I considers learning and property prediction on all the compounds, and strategy II learns to preselect compounds in the crossover region on which prediction is carried out. By performing only two active learning loops via strategy II, the compound (BaCa)(TiZrHf)O is synthesized with the largest energy storage density ≈73 mJ cm at a field of 20 kV cm, and an insight into the relative performance of the strategies using varying levels of knowledge is provided.
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http://dx.doi.org/10.1002/advs.201901395 | DOI Listing |
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January 2025
SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar, 751 005, India.
Understanding the resistive switching (RS) behavior of oxide-based memory devices at nanoscale is crucial for advancement of high-integration density in-memory computing platforms. This study explores a comprehensive growth parameter space to address the RS behavior of pulsed-laser-deposited substoichiometric TiO (TiO) thin films in search of tailored nanoscale memristors with low-power consumption and high stability. Conductive-atomic-force-microscopy-based measurements facilitate deciphering the switching behavior at nanoscale, providing a direct avenue to understand the microstructure-property relationships.
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January 2025
State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, China.
The scarcity of cost-effective and durable iridium-free anode electrocatalysts for the oxygen evolution reaction (OER) poses a significant challenge to the widespread application of the proton exchange membrane water electrolyzer (PEMWE). To address the electrochemical oxidation and dissolution issues of Ru-based electrocatalysts, an electron-donating modification strategy is developed to stabilize WRuO under harsh oxidative conditions. The optimized catalyst with a low Zirconium doping (Zr, 1 wt.
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January 2025
School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, China.
As emerging cutting-edge energy storage technologies, aqueous zinc-ion batteries (AZIBs) have garnered extensive research attention for its high safety, low cost, abundant raw materials, and, eco-friendliness. Nevertheless, the commercialization of AZIBs is mainly limited by insufficient development of cathode materials. Among potential candidates, MXene-based materials stand out as a promising option for their unique combination of hydrophilicity and conductivity.
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January 2025
National Energy Metal Resources and New Materials Key Laboratory, Engineering Research Center of the Ministry of Education for Advanced Battery Materials, Hunan Provincial Key Laboratory of Nonferrous Value-Added Metallurgy, School of Metallurgy and Environment, Central South University, Changsha, 410083, P. R. China.
Electrochemical CO reduction (CORR) in membrane electrode assembly (MEA) represents a viable strategy for converting CO into value-added multi-carbon (C) compounds. Therefore, the microstructure of the catalyst layer (CL) affects local gas transport, charge conduction, and proton supply at three-phase interfaces, which is significantly determined by the solvent environment. However, the microenvironment of the CLs and the mechanism of the solvent effect on C selectivity remains elusive.
View Article and Find Full Text PDFPhilos Trans A Math Phys Eng Sci
January 2025
Microsystems Group, School of Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, UK.
The increasing demand for processing large volumes of data for machine learning (ML) models has pushed data bandwidth requirements beyond the capability of traditional von Neumann architecture. In-memory computing (IMC) has recently emerged as a promising solution to address this gap by enabling distributed data storage and processing at the micro-architectural level, significantly reducing both latency and energy. In this article, we present In-Memory comPuting architecture based on Y-FlAsh technology for Coalesced Tsetlin machine inference (IMPACT), underpinned on a cutting-edge memory device, Y-Flash, fabricated on a 180 nm complementary metal oxide semiconductor (CMOS) process.
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