This report systematically investigates the influence of different carrier gases (O, N, and air) on the growth of gallium oxide (GaO) thin films on c-plane sapphire substrates by using the mist-CVD method. Although XRD and Raman measurements show that the pure corundum-structured α-GaO with single (0006) plane orientation was successfully obtained for all three different carrier gases, the crystal quality could be greatly affected by the carrier gas. When O is used as the carrier gas, the smallest full-width at half maximum (FWHM), the very sharp absorption cutoff edge, the perfect lattice structure, the highest growth rate, and the smooth surface can be obtained for the epitaxial α-GaO film as demonstrated by XRD, UV-VIS, TEM, AFM (Atomic Force Microscope), and SEM measurements. It is proposed that the oxygen content in carrier gas should be responsible for all of these results. XPS (X-ray photoelectron spectroscopy) analysis also confirms that more oxygen elements can be included in epitaxial film when O is used as the carrier gas and thus help improve the crystal quality. The proper carrier gas is essential for the high quality α-GaO growth.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6888560 | PMC |
| http://dx.doi.org/10.3390/ma12223670 | DOI Listing |
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