In this work, we report the application of highly efficient electrodeposited cobalt ferrite (CoFe O ) thin films in electrochemical degradation of rhodamine B. XRD, FTIR and Raman spectroscopic studies confirmed the formation of single phase CoFe O . SEM analysis revealed a very fine nanorods dispersed uniformly with average size around 30 nm. UV-Vis spectrophotometry emphasized that the optical band gap value is 1.6 eV. Moreover, the elaborated CoFe O thin films showed a good efficiency for the electrochemical degradation of an aqueous solution of rhodamine B (RhB) attaining 99% during the first 3 min of reaction time. The trapping experiments revealed that the hydroxyl radicals were the main active species leading to the removal of RhB initial concentration of 10 mg/L in a very short time. PRACTITIONER POINTS: A simple electrodeposition technique was used to fabricate CoFe O thin. XRD and FTIR studies revealed the formation of pure cubic spinel phase. Nano-rod like morphology has been successfully synthesized. The rhodamine B aqueous solution has been completely decolorized using the obtained CoFe O thin films.

Download full-text PDF

Source
http://dx.doi.org/10.1002/wer.1272DOI Listing

Publication Analysis

Top Keywords

cofe thin
20
electrochemical degradation
12
thin films
12
highly efficient
8
degradation rhodamine
8
xrd ftir
8
aqueous solution
8
cofe
6
thin
5
efficient nanostructured
4

Similar Publications

Gradient Surface Gallium-Doped Hematite Photoelectrode for Enhanced Photoelectrochemical Water Oxidation.

Nano Lett

January 2025

Institute of Photoelectronic Thin Film Devices and Technology, State Key Laboratory of Photovoltaic Materials and Cells, Tianjin Key Laboratory of Efficient Solar Energy Utilization, Ministry of Education Engineering Research Center of Thin Film Photoelectronic Technology, Nankai University, 300350 Tianjin, China.

Hematite is a promising material for photoelectrochemical (PEC) water oxidation, but its photocurrent is limited by bulk charge recombination and poor oxidation kinetics. In this study, we report a high-performance FeO photoanode achieved through gradient surface gallium doping, utilizing a GaO overlayer on FeOOH precursors via atomic layer deposition (ALD) and co-annealing for Ga diffusion. The Ga-doped layer passivates surface states and modifies the band structure, creating a built-in electric field that enhances the charge separation efficiency.

View Article and Find Full Text PDF

Structural, Magnetic, and Dielectric Properties of Laser-Ablated CoFeO/BaTiO Bilayers Deposited over Highly Doped Si(100).

Materials (Basel)

November 2024

Center of Physics of Minho and Porto Universities (CF-UM-UP), Laboratory for Materials and Emergent Technologies (LaPMET), Departamento de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal.

Laser ablation was used to successfully fabricate multiferroic bilayer thin films, composed of BaTiO (BTO) and CoFeO (CFO), on highly doped (100) Si substrates. This study investigates the influence of BaTiO layer thickness (50-220 nm) on the films' structural, magnetic, and dielectric properties. The dense, polycrystalline films exhibited a tetragonal BaTiO phase and a cubic spinel CoFeO layer.

View Article and Find Full Text PDF

Extremely Large Anisotropy of Effective Gilbert Damping in Half-Metallic CrO.

Nano Lett

December 2024

International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, P.R. China.

Half-metals are a class of quantum materials with 100% spin polarization at the Fermi level and have attracted a lot of attention for future spintronic device applications. CrO is one of the most promising half-metal candidates for which the electrical and magnetic properties have been intensively studied in the last several decades. Here, we report the observation of a giant anisotropy (∼1600%) of effective Gilbert damping in the single-crystalline half-metallic (100)-CrO thin films, which is significantly larger than the values observed on conventional ferromagnetic Fe and CoFe thin films.

View Article and Find Full Text PDF

Novel Al/CoFe/-Si and Al/NiFe/-Si MS-type photodiode for sensing.

Nanotechnology

October 2024

Department of Physics, Faculty of Arts and Sciences, Bozok University, Yozgat 66100, Turkey.

CoFe and NiFe are used in the construction of Si-based metal-semiconductor-type photodiodes. Thin film layers are sputtered onto the-Si surface where Al metal contacts are deposited using the thermal evaporation technique. Film characteristics of the layers are investigated with respect to the crystalline structure and surface morphology.

View Article and Find Full Text PDF

Highly-efficient and cost-effective electrocatalysts toward the oxygen evolution reaction (OER) are crucial for advancing sustainable energy technologies. Herein, a novel approach leveraging corrosion engineering is presented to facilitate the in situ growth of amorphous cobalt-iron hydroxides on nickel-iron foam (CoFe(OH)-m/NFF) within a NaCl-CoCl aqueous solution. By adjusting the concentration of the solution, the compositions can tailored and morphologies of these hydroxides to optimize the OER electrocatalytic performance.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!