Lattice mismatch can substantially impact the spatial organization of heterogeneous materials. We examine a simple model for lattice-mismatched solids over a broad range of temperature and composition, revealing both uniform and spatially modulated phases. Scenarios for coexistence among them are unconventional due to the extensive mechanical cost of segregation. Together with an adapted Maxwell construction for elastic phase separation, mean field theory predicts a phase diagram that captures key low-temperature features of Monte Carlo simulations.
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http://dx.doi.org/10.1103/PhysRevLett.123.135701 | DOI Listing |
Nanoscale
January 2025
Department of Materials Science and Engineering, Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu 804-8550, Japan.
Self-organization realizes various nanostructures to control material properties such as superconducting vortex pinning and thermal conductivity. However, the self-organization of nucleation and growth is constrained by the growth geometric symmetry. To realize highly controlled three-dimensional nanostructures by self-organization, nanostructure formation that breaks the growth geometric symmetry thermodynamically and kinetically, such as tilted or in-plane aligned nanostructures, is a challenging issue.
View Article and Find Full Text PDFJ Colloid Interface Sci
January 2025
College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar 161006, PR China; Heilongjiang Provincial Key Laboratory of Catalytic Synthesis for Fine Chemicals, Qiqihar University, Qiqihar 161006, PR China. Electronic address:
The establishment of heterojunctions has been demonstrated as an effective method to improve the efficiency of photocatalytic hydrogen production. Conventional heterojunctions usually have random orientation relationships, and heterointerfaces can hinder photogenerated carrier transport due to larger lattice mismatches, thus reducing the photoelectric conversion efficiency. In this study, a novel Te/InO@MXene lattice coherency heterojunction was prepared by leveraging the identical lattice spacing of InO (222) and Te (021) crystal face.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
State Key Laboratory of Explosion Science and Protection Technology, Beijing Institute of Technology, Beijing 100081, China.
Hydrogen embrittlement is a critical issue for zirconium alloys, which receives long-term attention in their applications. The formation of brittle hydrides facilitates crack initiation and propagation, thereby significantly reducing the material's ductility. This study investigates the tensile properties and hydride morphology of a novel zirconium alloy under different hydrogen-charging current densities ranging from 0 to 300 mA/cm, aiming to clarify the influence of hydrides on the fracture behavior of the alloy.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China.
To provide insight into the interface structure in Ti particle-reinforced Mg matrix composites, this study investigates the inherent Mg/Ti interface structure formed during the solidification of supercooled Mg melt on a (0001)Ti substrate using ab initio molecular dynamics (AIMD) simulations and density function theory (DFT) calculation. The resulting interface exhibits an orientation relationship of 0001Mg//0001Ti with a lattice mismatch of approximately 8%. Detailed characterizations reveal the occurrences of 0001Mg plane rotation and vacancy formation to overcome the lattice mismatch at the inherent Mg/Ti interface while allowing Mg atoms to occupy the energetically favorable hollow sites above the Ti atomic layer.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
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