The activity and accessibility of MoS edge sites are critical to deliver high hydrogen evolution reaction (HER) efficiency. Here, a porous carbon network confining ultrasmall N-doped MoS nanocrystals (N-MoS/CN) is fabricated by a self-templating strategy, which realizes synergistically structural and electronic modulations of MoS edges. Experiments and density functional theory calculations demonstrate that the N dopants could activate MoS edges for HER, while the porous carbon network could deliver high accessibility of the active sites from N-MoS nanocrystals. Consequently, N-MoS/CN possesses superior HER activity with an overpotential of 114 mV at 10 mA cm and excellent stability over 10 h, delivering one of best MoS-based HER electrocatalysts. Moreover, this study opens a new venue for optimizing materials with enhanced accessible catalytic sites for energy-related applications.
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http://dx.doi.org/10.1021/jacs.9b09932 | DOI Listing |
Sci Adv
January 2025
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan.
Transition metal dichalcogenides (TMDs) exhibit unique properties and potential applications when reduced to one-dimensional (1D) nanoribbons (NRs), owing to quantum confinement and high edge densities. However, effective growth methods for self-aligned TMD NRs are still lacking. We demonstrate a versatile approach for lattice-guided growth of dense, aligned MoS NR arrays via chemical vapor deposition (CVD) on anisotropic sapphire substrates, without tailored surface steps.
View Article and Find Full Text PDFJ Hazard Mater
December 2024
School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China; Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control, School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China. Electronic address:
Understanding the behavior and fate of microplastics (MPs) in aquatic environment is crucial for assessing their potential risks. This study investigated the heteroaggregation behaviors of MPs with representative 2D nanosheets, MoS and graphene oxide (GO), under various conditions, focusing on the transport behavior of the resulting aggregates. It was found that the destabilization capabilities of 2D nanosheets are notably stronger than those of well-reported nanoparticles.
View Article and Find Full Text PDFLight Sci Appl
January 2025
Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
Oxide materials with a non-centrosymmetric structure exhibit bulk photovoltaic effect (BPVE) but with a low cell efficiency. Over the past few years, relatively larger BPVE coefficients have been reported for two-dimensional (2D) layers and stacks with asymmety-induced spontaneous polarization. Here, we report a crucial breakthrough in boosting the BPVE in 3R-MoS by adopting edge contact (EC) geometry using bismuth semimetal electrode.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Information Science and Technology, Northwest University, Xi'an 710127, China.
Designing and discovering superior type-II band alignment are crucial for advancing optoelectronic device technologies. Here, we employ first-principles calculations to investigate the evolution of band edges in monolayer MoS, boron phosphide (BP), and MoS/BP heterostructures before and after their rolling into nanotubes. Our research results indicate that the intrinsic MoS/BP vertical heterostructures exhibit a type-II direct bandgap, but this feature is not robust under strain.
View Article and Find Full Text PDFNanophotonics
March 2024
Department of Physics, Hanyang University, Seoul 04763, Korea.
Transition metal dichalcogenide (TMDs) heterostructure, particularly the lateral heterostructure of two different TMDs, is gaining attention as ultrathin photonic devices based on the charge transfer (CT) excitons generated at the junction. However, the characteristics of the interface of the lateral heterostructure, determining the electronic band structure and alignment at the heterojunction region, have rarely been studied due to the limited spatial resolution of nondestructive analysis systems. In this study, we investigated the confined phonons resulting from the phonon-disorder scattering process involving multiple disorders at the lateral heterostructure interface of MoS-WS to prove the consequences of disorder-mediated deformation in the band structure.
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