High performance solar-blind photodetectors have been fabricated from diamond wafers. The peak responsivity is 13.0 A/W at 222 nm with a dark current of 0.93 nA under 60 V bias. The rise and decay times of the photodetector are about 1.3 µs and 203 µs, respectively. The responsivity and response time of the device are both among the best values ever reported for diamond-based photodetectors. A solar-blind optical communication system has been constructed by employing the diamond photodetector as a signal receiver for the first time. Benefiting from the high spectral selectivity of the diamond photodetector, the communication system has excellent anti-interference ability. The results reported in this paper may pave the way for the future application of diamond-based solar-blind photodetectors in confidential communications.
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http://dx.doi.org/10.1364/OE.27.029962 | DOI Listing |
Research (Wash D C)
December 2024
Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
The wide-bandgap semiconductor material GaO exhibits great potential in solar-blind deep-ultraviolet (DUV) photodetection applications, including none-line-of-sight secure optical communication, fire warning, high-voltage electricity monitoring, and maritime fog dispersion navigation. However, GaO photodetectors have traditionally faced challenges in achieving both high responsivity and fast response time, limiting their practical application. Herein, the GaO solar-blind DUV photodetectors with a suspended structure have been constructed for the first time.
View Article and Find Full Text PDFSmall Methods
December 2024
Chongqing Key Laboratory of Photo-Electric Functional Materials and Laser Technology, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331, P. R. China.
The continuous advancements in ultraviolet-C (UV-C) optoelectronics are poised to meet the growing demand for efficient and innovative optoelectronic devices, particularly in image sensing and neural communication. This study proposes a low-cost tube sealing and muffle calcination process for the catalyst-free synthesis of polymorphic β-GaO nanomaterials. These nanomaterials are synthesized via a vapor-solid (VS) growth mechanism, enabling the formation of high-quality nanowires (NWs), nanobelts (NBs), and nanosheets (NSs).
View Article and Find Full Text PDFACS Nano
December 2024
Key Lab of Artifcial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China.
Ultraviolet photodetectors (UV PDs) based on microcrystals (MCs) have attracted extensive attention due to their outstanding detection performance. Nevertheless, precise manipulation of the MCs still remains challenging, which may hinder the mass processing and performance improvement of the UV PDs. In this work, a single high-quality CsCuI MC that had a special X-shaped morphology was demonstrated to be successfully manipulated to prepare high-performance UV PDs by virtue of optical focusing, probe micromanipulation, and direct-write photolithography techniques.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2024
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.
High-performance GaO solar-blind photodetectors are critical for applications due to their selective solar-blind ultraviolet sensitivity. The quality of the GaO film has a significant impact on the performance of photodetectors. This study presents an innovative approach to enhancing the quality of GaO films through the introduction of a naturally graded buffer layer, which is formed by the oxidation of a metallic Ga film and significantly improves interface stability by accommodating lattice mismatches and reducing defects.
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