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Growth of AlGaN layers (0 ≤ x ≤ 1) simultaneously on polar (0001), semipolar ([Formula: see text]3) and ([Formula: see text]), as well as nonpolar ([Formula: see text]) and ([Formula: see text]) AlN templates, which were grown on planar sapphire substrates, has been investigated by metal-organic vapour phase epitaxy. By taking into account anisotropic in-plane strain of semi- and non-polar layers, their aluminium incorporation has been determined by x-ray diffraction analysis. Optical emission energy of the layers was obtained from room-temperature photoluminescence spectra, and their effective bandgap energy was estimated from room-temperature pseudo-dielectric functions. Both x-ray diffraction and optical data consistently show that aluminium incorporation is comparable on the polar, semi- and non-polar planes.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6825158 | PMC |
| http://dx.doi.org/10.1038/s41598-019-52067-y | DOI Listing |
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