Silicon carbide (SiC) ceramics have been widely used for microelectronics, aerospace, and other industrial fields due to their excellent chemical stability and thermal tolerance. However, hard machinability and low machining precision of SiC ceramics are the key limitations for their further applications. To address this issue, a novel method of underwater femtosecond laser machining was introduced in this study to obtain high precision and smooth surface of the microgrooves of SiC ceramics. The removal profiles were characterized in terms of width, depth, and surface morphology, which exhibited high dependence on the femtosecond laser processing parameters. The instability during the underwater processing affected by laser-induced gas bubbles and material deposition, however, limits the high surface accuracy of microgrooves and processing efficiency. The process condition transformation from a bubble-disturbed circumstance to a disturbance-free model was carefully investigated through a high speed camera for the femtosecond laser processing of SiC ceramics in water. The experiment results indicated that degree of disturbed effect was heavily dependent on size, distribution, and motion of laser-induced gas bubble. Furthermore, some typical evolution mechanisms of gas bubble and their influence on the removal profiles of microgrooves were discussed in detail. Bubble evolution has been proven to be mainly responsible for the behavior of laser propagation (focus model, total reflection, etc.), which notably affects microstructural characteristic of the microgrooves.
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