All-optical switch and logic gates based on hybrid silicon-GeSbTe metasurfaces.

We numerically propose a hybrid metasurface (MS) to realize all-optical switch and logic gates in the shortwave infrared (SWIR) band. Such MS consists of one silicon rod and one GeSbTe (GST) rod pair. Utilizing the transition from an amorphous state to a crystalline state of GST, such MS can produce an electromagnetically induced transparency (EIT) analogue with active control. Based on this, we realize all-optical switching at 1770 nm with a modulation depth of 84%. Besides, three different logic gates, NOT, NOR and OR, can also be achieved in this metadevice simultaneously. Thanks to the reversible and fast phase transition process of GST, this device possesses reconfigurable ability as well as fast response time, and has potential applications in future optical networks.