Cost and energy reductions in the production process of bismuth chalcogenide (BC) semiconductor materials are essential to make thermoelectric generators comprised of BCs profitable and CO neutral over their life cycle. In this study, as an eco-friendly production method, bismuth selenide (BiSe) nanoparticles were synthesized using the following five strains of chalcogen-metabolizing bacteria: Pseudomonas stutzeri NT-I, Pseudomonas sp. RB, Stenotrophomonas maltophilia TI-1, Ochrobactrum anthropi TI-2, and O. anthropi TI-3 under aerobic conditions. All strains actively volatilized selenium (Se) by reducing selenite, possibly to organoselenides. In the growth media containing bismuth (Bi) and Se, all strains removed Bi and Se concomitantly and synthesized nanoparticles containing Bi and Se as their main components. Particles synthesized by strain NT-I had a theoretical elemental composition of BiSe, whereas those synthesized by other strains contained a small amount of sulfur in addition to Bi and Se, making strain NT-I the best BiSe synthesizer among the strains used in this study. The particle sizes were 50-100 nm in diameter, which is sufficiently small for nanostructured semiconductor materials that exhibit quantum size effect. Successful synthesis of BiSe nanoparticles could be attributed to the high Se-volatilizing activities of the bacterial strains. Selenol-containing compounds as intermediates of Se-volatilizing metabolic pathways, such as methane selenol and selenocysteine, may play an important role in biosynthesis of BiSe.
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http://dx.doi.org/10.1007/s00253-019-10160-2 | DOI Listing |
Nanomaterials (Basel)
December 2024
State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China.
As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (BiSe) exhibits favorable electrical and optical properties. Here, three distinct morphologies of BiSe were obtained from bulk BiSe through electrochemical intercalation exfoliation. And the morphologies of these nanostructures can be tuned by adjusting solvent polarity during exfoliation.
View Article and Find Full Text PDFSmall
December 2024
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
Broadband detection technology is crucial in the fields of astronomy and environmental surveying. Two dimensional (2D) materials have emerged as promising candidates for next-generation broadband photodetectors with the characteristics of high integration, multi-dimensional sensing, and low power consumption. Among these, 2D tellurium (Te) is particularly noteworthy due to its excellent mobility, tunable bandgap, and air stability.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
December 2024
Catalonia Institute for Energy Research-IREC, Sant Adrià de Besòs, Barcelona, 08930, Spain.
Lithium-sulfur batteries (LSBs) are among the most promising next-generation energy storage technologies. However, a slow Li-S reaction kinetics at the LSB cathode limit their energy and power densities. To address these challenges, this study introduces an anionic-doped transition metal chalcogenide as an effective catalyst to accelerate the Li-S reaction.
View Article and Find Full Text PDFNanophotonics
March 2024
Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea.
The acousto-optic modulation over a broad near-infrared (NIR) spectrum with high speed, excellent integrability, and relatively simple scheme is crucial for the application of next-generation opto-electronic and photonic devices. This study aims to experimentally demonstrate ultrafast acousto-optic phenomena in the broad NIR spectral range of 0.77-1.
View Article and Find Full Text PDFACS Appl Mater Interfaces
October 2024
Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region, China.
Thermal resistance at interfaces/contacts stands as a persistent and increasingly critical issue, which hinders ultimate scaling and the performance of electronic devices. Compared to the extensive research on contact electrical resistance, contact thermal resistance and its mitigation strategies have received relatively less attention. Here, we report on an effective, in situ, and energy-efficient approach for enhancing thermal transport through the contact between semiconducting nanoribbons.
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