AI Article Synopsis
- A new hole transporting material (HTM) called DMZ has been developed for use in inverted planar perovskite solar cells (PSCs) without needing doping.
- * Systematic experimentation shows that the right thickness of the DMZ layer improves the perovskite's structure and reduces defects, leading to a higher power conversion efficiency (PCE) of 18.61%, which is significantly better than previous materials.
- * DMZ also outperforms traditional materials in terms of stability, retaining 90% of its maximum efficiency after over 556 hours in air, compared to only 36% retention for the commonly used PEDOT:PSS.
Article Abstract
A new hole transporting material (HTM) named DMZ is synthesized and employed as a dopant-free HTM in inverted planar perovskite solar cells (PSCs). Systematic studies demonstrate that the thickness of the hole transporting layer can effectively enhance the morphology and crystallinity of the perovskite layer, leading to low series resistance and less defects in the crystal. As a result, the champion power conversion efficiency (PCE) of 18.61% with J = 22.62 mA cm , V = 1.02 V, and FF = 81.05% (an average one is 17.62%) is achieved with a thickness of ≈13 nm of DMZ (2 mg mL ) under standard global AM 1.5 illumination, which is ≈1.5 times higher than that of devices based on poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonic acid) (PEDOT:PSS). More importantly, the devices based on DMZ exhibit a much better stability (90% of maximum PCE retained after more than 556 h in air (relative humidity ≈ 45%-50%) without any encapsulation) than that of devices based on PEDOT:PSS (only 36% of initial PCE retained after 77 h in same conditions). Therefore, the cost-effective and facile material named DMZ offers an appealing alternative to PEDOT:PSS or polytriarylamine for highly efficient and stable inverted planar PSCs.
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