A high-temperature metathesis reaction between CuBr and [PhP]MSe (M = Mo or W) gave rise to nanocrystalline CuMSe with a phase-pure M = Mo compound that was obtained for the first time. After exploring the formation mechanism, we found that the sub-stoichiometric ratios of CuBr to MSe resulted in the formation of a linear byproduct impurity, [PhP]CuMSe (M = Mo or W). However, excess CuBr selectively steered the reaction to the desired CuMSe. As a consequence of the newfound similarity in the reaction conditions for both metals, we have demonstrated the applicability of this method towards a mixed Mo/W quaternary composition.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1039/c9dt03282g | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
AgGaS and Derivatives: Design, Synthesis, and Optical Properties.
Nanomaterials (Basel)
January 2025
College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Silver gallium sulfide (AgGaS) is a ternary ABX-type semiconductor featuring a direct bandgap and high chemical stability. Structurally resembling diamond, AgGaS has gained considerable attention as a highly promising material for nonlinear optical applications such as second harmonic generation and optical parametric oscillation. In attempts to expand the research scope, on the one hand, AgGaS-derived bulk materials with similar diamond-like configurations have been investigated for the enhancement of nonlinear optics performance, especially the improvement of laser-induced damage thresholds and/or nonlinear coefficients; on the other hand, nanoscale AgGaS and its derivatives have been synthesized with sizes as low as the exciton Bohr radius for the realization of potential applications in the fields of optoelectronics and lighting.
View Article and Find Full Text PDFA Stepwise Reaction Achieves Ultrasmall AgZnSnS Nanocrystals.
ACS Nano
December 2024
Department of Chemistry, University of Toronto, Toronto, Ontario M5S 3H6, Canada.
Pirquitasite AgZnSnS (AZTS) nanocrystals (NCs) are emergent, lead-free emissive materials in the coinage chalcogenide family with applications in optoelectronic technologies. Like many multinary nanomaterials, their phase-pure synthesis is complicated by the generation of impurities, e.g.
View Article and Find Full Text PDFInfluence of Nitrogen Content on the Microstructure Evolution and Oxidation Resistance toward Ambient Air of CrAlSiN Coatings Deposited by FCVAD Technique.
ACS Appl Mater Interfaces
November 2024
Key Laboratory of Beam Technology of the Ministry of Education, School of Physics and Astronomy, Beijing Normal University, Beijing 100875, China.
Article Synopsis
- - The study examined CrAlSiN coatings with varying nitrogen content (42 to 54 at. %) and tested their microstructure and oxidation resistance at high temperatures (700 or 900 °C).
- At lower nitrogen levels (42-45 at. %), the coatings displayed a hybrid amorphous/nanocrystalline structure, while higher nitrogen contents (above 52 at. %) resulted in a columnar structure dominated by Cr(Al)N.
- The optimal nitrogen content of around 52 at. % provided the best oxidation resistance, characterized by a stable AlO-rich monolayer, while lower nitrogen coatings formed thicker CrO layers and showed elemental segregation after high-temperature exposure.
Morphology Variation of Ternary PdCuSn Nanocrystalline Assemblies and Their Electrocatalytic Oxidation of Alcohols.
ACS Appl Mater Interfaces
September 2024
Institute of Materials for Energy and Environment, College of Materials Science and Engineering, Qingdao University, Qingdao, Shandong 266071, People's Republic of China.
Metal alloys not only increase the composition and spatial distribution of elements but also provide the opportunity to adjust their physicochemical properties. Recently, multimetallic alloy nanocatalysts have attracted great attention in energy applications and the chemical industry. This work presents the production of three ternary PdCuSn nanocrystalline assemblies with similar compositions via a one-step hydrothermal method.
View Article and Find Full Text PDFDirect Growth of BiSeO Thin Films for High-k Dielectrics via Atomic Layer Deposition.
ACS Nano
August 2024
Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Daejeon, Yuseong-gu 34114, Republic of Korea.
This study describes a modified atomic layer deposition (ALD) process for fabricating BiOSe thin films, targeting their application as high-k dielectrics in semiconductor devices, especially for two-dimensional semiconductors. Using an intermediate-enhanced ALD technique for BiSe and a plasma-enhanced ALD process for BiO, a method for the sequential deposition of BiSeO ternary films has been established. The thin film has been deposited on SiO and TiN substrates, exhibiting growth rates of 0.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!