In this work, we report on the impedance of p-n junction-based Si biochips with gold ring top electrodes and unstructured platinum bottom electrodes which allows for counting target biomaterial in a liquid-filled ring top electrode region. The systematic experiments on p-n junction-based Si biochips fabricated by two different sets of implantation parameters (i.e. biochips PS5 and BS5) are studied, and the comparable significant change of impedance characteristics in the biochips in dependence on the number of bacteria suspension, i.e., JG-A12, in Deionized water with an optical density at 600 nm from OD = 4-16 in the electrode ring region is demonstrated. Furthermore, with the help of the newly developed two-phase electrode structure, the modeled capacitance and resistance parameters of the electrical equivalent circuit describing the p-n junction-based biochips depend linearly on the number of bacteria in the ring top electrode region, which successfully proves the potential performance of p-n junction-based Si biochips in observing the bacterial suspension. The proposed p-n junction-based biochips reveal perspective applications in medicine and biology for diagnosis, monitoring, management, and treatment of diseases.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6956254PMC
http://dx.doi.org/10.3390/bios9040120DOI Listing

Publication Analysis

Top Keywords

p-n junction-based
24
junction-based biochips
24
ring top
12
biochips
8
top electrode
8
electrode region
8
number bacteria
8
p-n
6
ring
5
junction-based
5

Similar Publications

Photovoltage-Driven Photoconductor Based on Horizontal -- Junction.

Nanomaterials (Basel)

September 2024

School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.

Article Synopsis
  • * The proposed horizontal junction-based photoconductor improves performance by using an n-region for charge transport that minimizes dark current and enhances photoconductivity.
  • * This device design balances responsivity, dark current, and response speed, presenting a novel method for creating high-performance photodetectors with both traditional and new nanomaterials.
View Article and Find Full Text PDF

Rational Molecular Design of Diketopyrrolopyrrole-Based n-Type and Ambipolar Polymer Semiconductors.

Chemistry

August 2024

Department of Materials Science and State Key Laboratory of Molecular Engineering of Polymers, Fudan University, 2005, Songhu Road, Shanghai, 200438, China.

Diketopyrrolopyrrole (DPP)-based polymer semiconductors have drawn great attention in the field of organic electronics due to the planar structure, decent solubilizing capability, and high crystallinity. However, the electron-deficient capacity of DPP derivatives are not strong enough, leading to relatively high-lying lowest unoccupied molecular orbital (LUMO) energy levels of the corresponding polymers. As a result, n-type and ambipolar DPP-based polymers are rare and their electron mobilities also lag far behind the p-type counterparts, which limits the development of important p-n-junction-based electronic devices.

View Article and Find Full Text PDF
Article Synopsis
  • Researchers are working on advanced terahertz (THz) wave generation using innovative multi-quantum well (MQW) IMPATT diodes made from AlGaN/GaN materials.
  • They explored two diode types: junction-based and Schottky barrier structures, and introduced techniques like mesa etching and nitrogen ion implantation to improve performance and reliability.
  • Their findings indicate that the Schottky barrier design significantly enhances power output and efficiency, making their devices superior to existing THz sources and opening new possibilities for THz technology applications.
View Article and Find Full Text PDF

Carbon nanotubes and their composite thermoelectric (TE) materials have significant advantages in supplying power to flexible electronics due to their high electrical conductivity, excellent flexibility, and facile preparation technology. In this work, stable n-type silver ammonia-polyethyleneimine/single-walled carbon nanotube ([Ag(NH)]-PEI/SWCNT) composite films were facilely prepared by solution blending and vacuum-filtration methods. The results demonstrate that light silver ammonia doping optimizes the carrier concentration and carrier mobility of the composite film, and a maximum power factor (PF) of [Ag(NH)]-PEI/SWCNT of 91.

View Article and Find Full Text PDF

Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation.

Micromachines (Basel)

August 2023

Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei 230093, China.

In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!