Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.

Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional -doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain the integrity of the layer make developing a robust electrical contact method a significant challenge to realizing the potential of atomically precise devices. We demonstrate a method for electrical contact using PdSi formed at the temperature of silicon overgrowth (250 °C), minimizing the diffusive impact on the layer. We use the transfer length method to show our PdSi contacts have very high yield (99.7% +0.2% -1.5%) and low resistivity (272±41Ωm) in contacting mesa-etched Si:P layers. We also present three terminal measurements of low contact resistance (<1 kΩ) to devices written by STM hydrogen depassivation lithography with similarly high yield (100% +0% -3.2%).