Carbon nanotubes (CNTs) are promising candidates for smart electronic devices. However, it is challenging to mediate their bandgap or chirality from a vapor-liquid-solid growth process. Here, we demonstrate rate-selected semiconducting CNT arrays based on interlocking between the atomic assembly rate and bandgap of CNTs. Rate analysis confirms the Schulz-Flory distribution which leads to various decay rates as length increases in metallic and semiconducting CNTs. Quantitatively, a nearly ten-fold faster decay rate of metallic CNTs leads to a spontaneous purification of the predicted 99.9999% semiconducting CNTs at a length of 154 mm, and the longest CNT can be 650 mm through an optimized reactor. Transistors fabricated on them deliver a high current of 14 μA μm with on/off ratio around 10 and mobility over 4000 cm V s. Our rate-selected strategy offers more freedom to control the CNT purity in-situ and offers a robust methodology to synthesize perfectly assembled nanotubes over a long scale.
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http://dx.doi.org/10.1038/s41467-019-12519-5 | DOI Listing |
ACS Omega
December 2024
Petroleum and Chemical Engineering Department, College of Engineering, Sultan Qaboos University, Muscat 123, Oman.
Carbon nanotubes (CNTs) have emerged as one of the most capable and interesting materials in recent decades and have extraordinary mechanical properties (MPs) and resourceful applications in bioengineering and medicine. Equilibrium molecular dynamics simulations have been performed to investigate the structural and MPs of armchair, chiral, and semiconducting and metallic zigzag single-walled CNTs (SWCNTs) under varying temperature (K) and compressive and tensile strains ±γ (%) with reactive bond-order potential. New results elaborate on the buckling and deformation mechanisms of the SWCNTs through deep analyses of density profiles, radial distribution functions, structural visualizations, and stress-strain interactions.
View Article and Find Full Text PDFNanomaterials (Basel)
September 2024
Department of Chemistry and Physics, Prairie View A&M University, Prairie View, TX 77446, USA.
Carbon nanotubes (CNTs) are often regarded as semi-rigid, all-carbon polymers. However, unlike conventional polymers that can form 3D networks such as hydrogels or elastomers through crosslinking in solution, CNTs have long been considered non-crosslinkable under mild conditions. This perception changed with our recent discovery of UV-defluorination-driven direct crosslinking of CNTs in solution.
View Article and Find Full Text PDFPhys Chem Chem Phys
September 2024
Laboratory for Electro-Optics Systems (LEOS), Indian Space Research Organization (ISRO), Bengaluru, 560 058, India.
Low-dimensional carbon materials are of great interest and have tremendous potential for application in flexible plastic electronics. However, the development of devices based on carbon structural hybrids is often hindered due to the high recombination rate of photoexcited charges, low absorbance, and other factors. This work discusses the emergence of multi-component structural forms of carbon from single-wall carbon nanotubes (SWCNTs) and demonstrates the electrical nature of the film containing these heterogeneous low-dimensional structural derivatives that are amalgamated in a polyurethane matrix.
View Article and Find Full Text PDFACS Nano
August 2024
Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China.
ACS Nano
August 2024
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China.
High density and high semiconducting-purity single-walled carbon nanotube array (A-CNT) have recently been demonstrated as promising candidates for high-performance nanoelectronics. Knowledge of the structures and arrangement of CNTs within the arrays and their interfaces to neighboring CNTs, metal contacts, and dielectrics, as the key components of an A-CNT field effect transistor (FET), is essential for device mechanistic understanding and further optimization, particularly considering that the current technologies for the fabrication of A-CNT wafers are mainly laboratory-level solution-based processes. Here, we conduct a systematic investigation into the microstructures of A-CNT FETs mainly via cross-sectional high-resolution transmission electron microscopy and tentatively establish a framework consisting of up to 11 parameters which can be used for structure-side quality evaluation of the A-CNT FETs.
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