The avoidance of a hole in the pathway while walking has been systematically investigated; however, depending on the dimensions of the hole, the option to avoid it is infeasible, and it is necessary to use the so-called accommodation strategy to step into the hole. We investigated the critical point between the avoidance and accommodation strategies when dealing with a hole in the ground during locomotion of young and older adults. Young and older adults performed two tasks: verbal estimation and walking. We used holes of different lengths and constant depth (12 cm). In the verbal estimation task, participants stood and looked at each hole and verbally respond if they would step into or avoid it. In the walking task, they walked and chose to either step or avoid the hole. Both age groups preferred to step into the hole when it was larger than 1.3 times their foot length in both tasks. The perception of affordances of young and older adults to step into a hole was similar, and it was unaffected by the investigated tasks. Thus, our participants preferred to have a safety margin that was large enough to guarantee that the whole foot would accommodate within the hole.
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http://dx.doi.org/10.1080/00222895.2019.1672618 | DOI Listing |
Bioresour Bioprocess
December 2024
Shanghai AsymBio Biotechnology Co., Ltd, Building 8, No.12, Lane 855, Jinzheng Road, Jinshan Industrial Park, Shanghai, China.
Bispecific antibodies hold significant potential as next-generation biotherapeutics owing to their ability to simultaneously bind to two targets. However, the development of bispecific antibodies as biotherapeutics has been hindered by the high levels of byproducts produced, including both high molecular weight and low molecular weight variants. In addition, the inevitable expression of homodimers in host cells presents further obstacles to the commercial development of bispecific antibodies as therapeutics.
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December 2024
College of Chemistry and Material Science, Key Laboratory of Agricultural Film Application of Ministry of Agriculture and Rural Affairs, Shandong Agricultural University, Tai'an, Shandong, 271018, P. R. China.
Interfacial charge-carrier complexation is a bottleneck problem governing the gating effect of organic photoelectrochemical transistor (OPECT) biosensors. Therefore, it has long been desired to enhance the OPECT gating effect and realize the maximum transconductance at zero bias. In this study, an in situ engineered heterojunction gating and nano-enzymatic catalytic integration of OPECT-colorimetric dual-mode sensing platform is developed for dibutyl phthalate detection.
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November 2024
School of Material and Chemical Engineering, Zhengzhou University of Light Industry, 136 Kexue Road, Zhengzhou 450002, China.
In response to the challenges of food spoilage and water pollution caused by pathogenic microorganisms, CeO/g-CN nanocomposites were synthesized via one-step calcination using thiourea and urea as precursors. Steady-state photoluminescence (PL) spectroscopy analysis demonstrated that 8 wt% CeO/g-CN exhibited superior electron-hole separation efficiency. Quantitative antimicrobial assays demonstrated that the nanocomposites displayed enhanced bactericidal activity against , , and .
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December 2024
Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan.
Herein, quasi-two-dimensional (Q-2D) (PEA)MAPbI (prepared by a two-step process) and hole transport layer of a solar cell were fabricated in a high relative humidity (25 ± 5%) environment. The PSC behavior of most Q-2D perovskites is worse than that of three-dimensional perovskites owing to the horizontal alignment of the innate characteristic organic plates on the substrate. Using hybrid immersion solvents (HISs), we have improved vertical alignment in an appropriate ratio to enhance the efficiency of charge transfer and the high coverage of the first priming layer (first step).
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December 2024
Institute of Chemical Engineering Sciences, Foundation of Research and Technology-Hellas (FORTH/ICE-HT), Stadiou Street, Platani, Patras 26504, Greece.
In this work, we present a comprehensive protocol for achieving hole doping in graphene through exposure to nitric acid (HNO) vapors. We demonstrate gradual p-type surface doping of CVD-grown graphene on a Si/SiO substrate by thermally depositing nitric acid molecules to form self-assembled charge transfer complexes. Detailed analysis of charge carrier concentration and Fermi energy shifts was conducted using Raman, X-ray and ultraviolet photoelectron spectroscopies (XPS/UPS).
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