The further practical applications of halide perovskite quantum dots (QDs) are blocked by problems of instability and nonradiative Auger recombination manifested as photoluminescence blinking. Here, single core/shell structured perovskite semiconductor QDs are successfully fabricated by capping CsPbBr QD core with CdS shell. It is demonstrated that CsPbBr/CdS core/shell QDs exhibit ultrahigh chemical stability and nonblinking photoluminescence with high quantum yield due to the reduced electronic traps within the core/shell structure. Efficiency of amplified spontaneous emission exhibits obvious enhancement compared to that of pure CsPbBr QDs, originating from the mitigated competition between stimulated emission and suppressed nonradiative biexciton Auger recombination. Furthermore, low-threshold whispering-gallery-mode lasing with a high-quality factor is achieved by incorporating CsPbBr/CdS QDs into microtubule resonators. Density functional theory (DFT)-based first-principles calculations are also performed to reveal the atomic interface structure, which supports the existence of CsPbBr/CdS structure. An interesting feature of spatially separated charge density at CsPbBr/CdS interface is found, which may greatly contribute to the suppressed Auger recombination. The results provide a practical approach to improve the stability and suppress the blinking of halide perovskite QDs, which may pave the way for future applications for various optoelectronic devices.
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http://dx.doi.org/10.1002/advs.201900412 | DOI Listing |
Nat Commun
January 2025
Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden.
One of the key advantages of perovskite light-emitting diodes (PeLEDs) is their potential to achieve high performance at much higher current densities compared to conventional solution-processed emitters. However, state-of-the-art PeLEDs have not yet reached this potential, often suffering from severe current-efficiency roll-off under intensive electrical excitations. Here, we demonstrate bright PeLEDs, with a peak radiance of 2409 W sr m and negligible current-efficiency roll-off, maintaining high external quantum efficiency over 20% even at current densities as high as 2270 mA cm.
View Article and Find Full Text PDFSmall
January 2025
College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin, 150001, P. R. China.
Currently, CsPbI quantum dots (QDs) based light-emitting diodes (LEDs) are not well suited for achieving high efficiency and operational stability due to the binary-precursor method and purification process, which often results in the nonstoichiometric ratio of Cs/Pb/I. This imbalance leads to amounts of iodine vacancies, inducing severe non-radiative recombination processes and phase transitions of QDs. Herein, red-emitting CsPbI QDs are reported with excellent optoelectronic properties and stability based on the synergistic effects of halide-rich modulation passivation and lattice repair.
View Article and Find Full Text PDFNanoscale
January 2025
The Canter for Photochemical Sciences and Department of Physics, Bowling Green State University, Bowling Green, Ohio 43403, USA.
Laser diodes based on solution-processed semiconductor quantum dots (QDs) present an economical and color-tunable alternative to traditional epitaxial lasers. However, their efficiency is significantly limited by non-radiative Auger recombination, a process that increases lasing thresholds and diminishes device longevity through excessive heat generation. Recent advancements indicate that these limitations can be mitigated by employing spherical quantum wells, or quantum shells (QSs), in place of conventional QDs.
View Article and Find Full Text PDFACS Nano
January 2025
Department of Chemistry, University of Washington, Seattle, Washington 98195, United States.
We demonstrate the use of [2-(9-carbazol-9-yl)ethyl]phosphonic acid (2PACz) and [2-(3,6-di--butyl-9-carbazol-9-yl)ethyl]phosphonic acid (-Bu-2PACz) as anode modification layers in metal-halide perovskite quantum dot light-emitting diodes (QLEDs). Compared to conventional QLED structures with PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate)/PVK (poly(9-vinylcarbazole)) hole-transport layers, the QLEDs made with phosphonic acid (PA)-modified indium tin oxide (ITO) anodes show an over seven-fold increase in brightness, achieving a brightness of 373,000 cd m, one of the highest brightnesses reported to date for colloidal perovskite QLEDs. Importantly, the onset of efficiency roll-off, or efficiency droop, occurs at ∼1000-fold higher current density for QLEDs made with PA-modified anodes compared to control QLEDs made with conventional PEDOT:PSS/PVK hole transport layers, allowing the devices to sustain significantly higher levels of external quantum efficiency at a brightness of >10 cd m.
View Article and Find Full Text PDFSci Rep
January 2025
Department of Sciences, Indian Institute of Information Technology Design and Manufacturing Kurnool, Kurnool, Andhra Pradesh, 518008, India.
The simulation of ideal and non-ideal conditions using the SCAPS-1D simulator for novel structure Ag/FTO/CuBiO/GQD/Au was done for the first time. The recombination of charge carriers in CuBiO is an inherent problem due to very low hole mobility and polaron transport in the valence band. The in-depth analysis of the simulation result revealed that Graphene Quantum Dots (GQDs) can act as an appropriate hole transport layer (HTL) and can enhance hole transportation.
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